NONLINEAR REFRACTION FOR CW OPTICAL BISTABILITY

In the present frame of work, optical bistability using a Fabry–Perot (FP) cavity containing 4-dicyanomethylene-2-methyl-6-p-dimethylaminostyryl-4H-pyran (DCM) dye entrapped in poly-methylmethacrylate (PMMA) matrix is experimentally investigated. Optical nonlinear behavior of solid-state samples is studied using a single-mode Q-switched nanosecond Nd:YAG laser operating at 532 nm. Various optical nonlinear parameters such as nonlinear refractive index (n2) and third-order susceptibility (χ3) of the material are numerically estimated from bistability loops. The origin of optically bistable behavior is attributed to photoisomerization-assisted nonlinear refraction phenomenon. It is observed that nonlinear refraction dominates over nonlinear absorption in giving rise to the optical bistability. The study shows that DCM dye entrapped in solid-state matrices are promising candidate for polymer-based optical switches, data processing, and communication systems.

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Theory of nonlinear refraction near the band edge of a semiconductor

Proceedings of the Royal Society of London Series A - Mathematical and Physical Sciences ◽

10.1098/rspa.1982.0005 ◽

1982 ◽

Vol 379 (1776) ◽

pp. 67-90 ◽

Cited By ~ 74

Keyword(s):

Absorption Edge ◽

Optical Bistability ◽

Nonlinear Refraction ◽

Four Wave Mixing ◽

Band Edge ◽

Wave Mixing ◽

Nonlinear Dispersion ◽

Physical Origin ◽

Differential Gain

Detailed comparisons are made of the results of two approaches to the problem of nonlinear refraction at frequencies just below the band edge in semiconductors. The physical origin o f the nonlinear dispersion is taken to be direct saturation of independent, T 2 -broadened band states in the first model discussed. In the second model the refraction associated with a dynamic Burstein-Moss shift of the absorption edge is considered. Both models predict an extremely large nonlinearity, X (3) ≈ 1 e. s. u., of importance in the field of dispersive optical bistability and consistent with experimental observations of bistability, two-beam differential gain and four-wave mixing.

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Nonlinear refraction and increasing absorption in HgCdTe optical bistability at room temperature: an experimental study

Optics Communications ◽

10.1016/0030-4018(88)90155-1 ◽

1988 ◽

Vol 67 (4) ◽

pp. 305-310 ◽

Cited By ~ 1

Author(s):

S. Cecchi ◽

P.M. Coppo ◽

P. Salieri ◽

F.T. Arecchi

Keyword(s):

Experimental Study ◽

Optical Bistability ◽

Room Temperature ◽

Nonlinear Refraction

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Nonlinear refraction and optical bistability in Cd1−xMnxTe

Journal of Luminescence ◽

10.1016/0022-2313(94)90445-6 ◽

1994 ◽

Vol 58 (1-6) ◽

pp. 396-398 ◽

Cited By ~ 3

Author(s):

Andrzej Suchocki ◽

L. Kowalczyk ◽

R.R. Gałcrossed l.c.la̧zka

Keyword(s):

Optical Bistability ◽

Nonlinear Refraction

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One-electron theory of nonlinear refraction

Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences ◽

10.1098/rsta.1984.0098 ◽

1984 ◽

Vol 313 (1525) ◽

pp. 213-220 ◽

Cited By ~ 16

Keyword(s):

Optical Bistability ◽

Nonlinear Refraction ◽

Electron Theory ◽

Mixing Processes ◽

Power Switching ◽

Self Consistent ◽

Optical Mixing ◽

Analytic Expressions ◽

The 1960S ◽

Material Temperature

The design of optically bistable cavities for low-power switching requires an understanding of the variation of nonlinearities in refractive index with material, temperature, wavelength and cavity parameters. Analytic expressions, suitable for scaling, are discussed. The connections between the giant nonlinearities under current investigation and the nonlinear optical mixing processes studied since the 1960s are reviewed and the self-consistent semiconductor optical bistability problem is summarized.

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