FINE STRUCTURE IN THE CURRENT-VOLTAGE CHARACTERISTICS OF A 200nm DIAMETER AlGaAs-GaAs RESONANT TUNNELING DIODE IN HIGH MAGNETIC FIELDS

1992 ◽  
pp. 217-223
Author(s):  
M. Tewordt ◽  
L. Martín-Moreno ◽  
V.J. Law ◽  
M.J. Kelly ◽  
D.A. Ritchie ◽  
...  
Keyword(s):  
Fine Structure ◽  
Magnetic Fields ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
High Magnetic Fields ◽  
Tunneling Diode ◽  
Current Voltage ◽  
Current Voltage Characteristics

Simulation of Polarization Effect in GaN/AlN Resonant Tunneling Diode

2013 ◽  
Vol 774-776 ◽  
pp. 691-694
Author(s):  
Nai Yun Tang
Keyword(s):  
Electronic Properties ◽  
Resonant Tunneling ◽  
Polarization Effect ◽  
Resonant Tunneling Diode ◽  
Band Diagram ◽  
Poisson Equations ◽  
Tunneling Diode ◽  
Current Voltage ◽  
Self Consistent ◽  
Current Voltage Characteristics

Influence of polarization effect on current across GaN/AlNresonant tunneling diode (RTD) is simulated by self-consistent calculations ofSchrödinger and Poisson equations. When taking into account polarization chargesat the heterointerface, the band diagram and electronic properties of RTD areobviously changed. As a result, the current-voltage characteristics showsasymmetrical phenomenon. As the polarization effect is enhanced, the resonancepeak is shifted accordingly and even disappears.

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