Influence of radiation exposure on the properties of dielectric layers based on anodic aluminum oxide

Devices that are used in the aerospace industry must operate in extreme conditions, so it is important to understand how the properties of materials change under the influence of radiation and low temperatures. Anodic aluminum oxide, due to its mechanical and dielectric properties, is widely used in electronic devices with a high degree of integration. Radiation exposure can lead to degradation of the electrophysical parameters of dielectric films and can also change their chemical composition. The methods for studying the effect of radiation exposure on the dielectric properties of films are shown in this article. The research has been carried out and the results of the influence of α-particles on the dielectric properties of a porous film of anodic aluminum oxide during the influence of low temperature are presented.

Влияние наличия достаточно высокой концентрации фосфора на концентрационное распределение галлия в кремнии

It was found that the silicon preliminarily doped with a high concentration of phosphorus during the diffusion of gallium, there is a significant increase in the solubility of the gallium. The results obtained are explained by the interaction of gallium and phosphorus atoms, as a result of which quasi-neutral molecules [P+Ga-] are formed. It is assumed that the formation of such quasineutral molecules [P+Ga–] stimulates the formation of Si2GaP binary unit cells in the silicon lattice. It is shown that a sufficiently high concentration of such unit cells can lead to a significant change in the electrophysical parameters of silicon, i.e. the possibility of obtaining a new material based on silicon.

Peculiarities of specular infrared reflection spectra of ZnO-based ceramics

Undoped and Mn-doped ZnO ceramics were theoretically and experimentally investigated using specular infrared reflection method. It was shown that infrared reflection spectra can be modeled using the parameters explored for ZnO single crystals. For ceramic samples, it was shown that ZnO grains with orientation of the C-axis along the normal to the electric field ( ) give the main contribution to IR reflection spectra. It has been ascertained that the surface roughness is manifested in these spectra mainly within the range 450…550 cm–1 giving negligible effect for the frequencies above longitudinal phonon frequency. This allowed the electrophysical parameters of ZnO crystallites to be evaluated. In the case of undoped ceramics, the obtained results were found to be consistent with the values of direct current measurements. This finding supports the utility of infrared spectroscopy for determination of the electrophysical parameters of polycrystalline ceramic materials. For Mn-doped ceramic samples, the conductivity value measured using the direct current method was found to be essentially lower than those determined from simulation of infrared reflection spectra. This phenomenon was explained by barrier formation at the grain boundaries in Mn-doped ZnO ceramics.

INFLUENCE OF THERMAL STRESS RATE ON CHANGES IN ELECTRICAL INSULATING OILS

This work solves the comparison of two different thermal stress times for selected liquid insulation materials based on transformer oils by impedance spectroscopy. Research is focused on actual and progressive liquid insulation materials. The scientific objectives of the experiment are focused on the determination of hypotheses, defined by predictable electrophysical parameters in experimental conditions, which are described in the analysis of the measured results.

Influence of surface structure and morphology of PEDOT: PSS on its optical and electrophysical characteristics

This paper presents the results of a study of the effect of modification of the structure of the PEDOT: PSS polymer with hole conductivity on the optical and electrophysical properties of an organic solar cell. It was found that the modification of a polymer film with ethyl and isopropyl alcohols leads to a change in the morphology and roughness of the film surface. It has been determined that annealing of films in alcohol vapor promotes the formation of more uniform films. It is shown that upon modification of the PEDOT: PSS film in alcohol vapor the absorption spectrum shifts the absorption maximum of PEDOT to the short-wavelength region of the spectrum, the absorption of the aromatic PSS fragment decrease. X-ray phase analysis showed that after surface modification with alcohol vapor, the PEDOT and PSS chains change their structure. It is shown that the structural features of the surface morphology of PEDOT: PSS affect the electrophysical parameters of the films, such as the effective extraction rate and the effective time of flight of charge carriers. It was found that the modification of the surface of the PEDOT: PSS film leads to an improvement in the electrical transport properties of the films.

Electrophysical Parameters of Nanofilled Polymer Composites Based on Polyethylene

The features of the dependence of the dielectric constant and the specific volume resistance of the composite "80 wt. % SKI-3 + 20 % wt. % LDPE" from the content of nanosized filler particles - aluminum and black carbon. The use of modern methods for studying macroscopic properties and electron microscopy made it possible to study the structure and morphology of the supramolecular formations of the composite. Models and possible physical mechanisms leading to extreme changes in εʹ and ρV at low concentrations of nanoparticles are presented.

Physico-chemical Processes at the Interface of Heterostructures Ag-Pd – Sn-Pb

Physicochemical processes taking place at the interface of film elements (conductors) of hybrid integrated circuits, thick-film sensors and other microelectronic devices (MED) based on silver-palladium pastes and elements of standard soldering materials have been studied. Physicochemical mechanisms of processes of the material element mutual dissolution at the interface are proposed and analyzed. Conclusions are made that these processes affect the degradation of the electrophysical parameters and contact switch connections operational characteristics. It is established that the degradation main cause (partial or complete destruction of the contact connections on substrate ceramics (glass) Ag-Pd – Sn-Pb) is the functional film material significant dissolution in the Sn-Pb melt.