THERMAL CONDUCTIVITY AND ELECTRICAL RESISTIVITY OF VERY HIGH-PURITY COPPER AT LOW TEMPERATURES

Author(s):  
R. Li ◽  
T. Hashimoto ◽  
K. Ohta ◽  
H. Okamoto
1967 ◽  
Vol 45 (12) ◽  
pp. 3849-3865 ◽  
Author(s):  
J. P. Moore ◽  
D. L. McElroy ◽  
R. S. Graves

A guarded-axial heat-flow technique for accurately measuring thermal conductivity, electrical resistivity, and Seebeck coefficient from 78 to 400 °K on small rod samples is described in detail. Results on a 99.999% pure polycrystalline copper specimen (ρ273.16°K/ρ4.2°K = 9.0 × 102) are compared with the results of previous investigators.The behavior of the electrical resistivity and the thermal conductivity is discussed in terms of existing theoretical equations. Although copper is a relatively simple monovalent metal, little agreement between the experimental thermal conductivity results and theory was found. The behavior of the experimental electrical resistivity from 100 to 1 200 °K was explained in terms of an approximation to the Bloch-Grüneisen equation.


Cryogenics ◽  
1981 ◽  
Vol 21 (12) ◽  
pp. 741-745 ◽  
Author(s):  
Yu.F. Bychkov ◽  
R. Herzog ◽  
I.S. Khukhareva

1972 ◽  
Vol 50 (12) ◽  
pp. 1386-1401 ◽  
Author(s):  
J. G. Cook ◽  
M. P. Van der Meer ◽  
M. J. Laubitz

We present data on the electrical and thermal resistivities and the thermopower of three pure Na specimens from 40 to 360 K. The measurements were made using a guarded longitudinal heat flow apparatus that had previously been calibrated with Au and Al. The specimens were placed in a vacuum environment using no solid inert liner.The electrical resistivity data indicate ΘR = 194 K. The thermal conductivity data show a 4% minimum near 70 K and an ice point value of 1.420 W/cm K. The reduced Lorenz function L/L0 agrees with published data at low temperatures but above 300 K levels off at approximately 0.91. On the basis of published data for liquid Na, L/L0 does not change by more than 3% at the melting point.The minimum in the thermal conductivity and a part of the high temperature deviations of L from L0 are tentatively ascribed to inelastic electron–phonon collisions having a characteristic temperature near that of longitudinal phonons. The possibility that electron–electron collisions further depress L at high temperatures is critically examined.


1993 ◽  
Vol 32 (Part 1, No. 7) ◽  
pp. 3199-3203 ◽  
Author(s):  
Hiroshi Nakane ◽  
Tsuneo Watanabe ◽  
Mineo Kobayashi ◽  
Takasu Hashimoto

1989 ◽  
Vol 167 ◽  
Author(s):  
Ralph B. Dinwiddie ◽  
David G. Onn

AbstractThe materials studied in this research, having a wide range of thermal conductivities, permit a study of the mechanisms which affect their behavior. Data on the thermal conductivity of several substrate materials, over a wide temperature range, were analyzed using the Klemens model. Parameters in this model, which include crystallite size and impurity concentration, are determined through a nonlinear least squares fitting routine and related, where possible, to values obtained by other techniques. This analysis predicts an achievable upper limit of 290 W/m.K for very high purity sintered AlN with 5 micron crystallites.


1957 ◽  
Vol 35 (3) ◽  
pp. 248-257 ◽  
Author(s):  
G. K. White ◽  
S. B. Woods

Measurements are reported of the thermal and electrical conductivities of the transition elements Rh, Ir, Pt in a state of high purity; the rapid rate of decrease of the "ideal" thermal and electrical resistivities with temperature, particularly in Rh and Ir, suggests that s–d transitions are not a dominant resistive mechanism at low temperatures in these metals, in contrast to palladium, iron, and nickel, which were studied previously. The electrical resistivity of platinum is in general agreement with the earlier results of de Haas and de Boer (1934); the quadratic dependence on temperature observed below about 10° K. suggests that electron–electron collisions may well be an important factor in this metal.


2005 ◽  
Vol 2 (3) ◽  
pp. 217-222
Author(s):  
Yasunari Ukita ◽  
Kazuki Tateyama ◽  
Masao Segawa ◽  
Yoshihiko Tojo ◽  
Hideyuki Gotoh ◽  
...  

Lead-free materials are required to replace conventional lead-containing solder for environmental protection. The Pb-rich solder die mount material in a high-power transistor package is required to be replaced by a silver adhesive paste. The silver paste has disadvantages such as low thermal conductivity and high electrical resistivity, since conduction paths are achieved only by mechanical contacts between silver particles. Recently, a new conductive paste containing silver particles and silver nanoparticles with a particle size of 3–7 nm in diameter was developed. The paste shows very low electrical resistivity of 6×10−6 ohm.cm, since the silver nanoparticles can be fused at temperatures below 200°C. We have been studying the possibility of the paste as a die mount material for high-power transistor packages. It was confirmed that the paste had a very high thermal conductivity of 51 W/mK. We fabricated a high-power transistor package using this paste. As a result, the package showed lower thermal resistance than that fabricated using silver paste or lead-containing solder. Moreover, the package is sufficiently reliable that it passed the thermal cycle and pressure cooker tests. This paste can be applied to a high-power transistor package in place of lead-containing solder.


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