Optical characterization of PLD grown nitrogen-doped TiO2 thin films

2008 ◽  
Vol 254 (11) ◽  
pp. 3484-3488 ◽  
Author(s):  
B. Farkas ◽  
J. Budai ◽  
I. Kabalci ◽  
P. Heszler ◽  
Zs. Geretovszky
2007 ◽  
Vol 601 (18) ◽  
pp. 4515-4520 ◽  
Author(s):  
D. Mardare ◽  
D. Luca ◽  
C.-M. Teodorescu ◽  
D. Macovei

Optik ◽  
2014 ◽  
Vol 125 (8) ◽  
pp. 1993-1996 ◽  
Author(s):  
K. Rajendran ◽  
V. Senthil Kumar ◽  
K. Anitha Rani

2005 ◽  
Vol 475-479 ◽  
pp. 1223-1226 ◽  
Author(s):  
Ming Zhao ◽  
Da Ming Zhuang ◽  
Gong Zhang ◽  
Ling Fang ◽  
Min Sheng Wu

The nitrogen-doped TiO2 thin films were prepared by mid-frequency alternative reactive magnetron sputtering technique. The N concentration of the nitrogen-doped TiO2 thin films was analyzed by XPS. And the absorption spectra of the films in ultraviolet and visible region were also investigated. The results show that the mid-frequency alternative reactive magnetron sputtering technique is a convenient method for growing TiO2-xNx. Annealing the nitrogen-doped TiO2 thin film in nitrogen atmosphere under 380°C is helpful for increase the concentration of nitrogen in the film, but the ratio of N2 in reactive gas is mainly influence the concentration of nitrogen in the Ti-N bond in the TiO2 film. The increase of the thickness of nitrogen-doped TiO2 films will enhance the absorbability of the film in the ultraviolet and visible region. The wavelength of the absorption edge of TiO2-xNx film with 1.5% nitrogen shift to 441nm from 387nm, which is the absorption edge for undoped TiO2 films.


Optik ◽  
2017 ◽  
Vol 142 ◽  
pp. 42-53 ◽  
Author(s):  
Selma M.H. AL-Jawad ◽  
Ali A. Taha ◽  
Mohammed M. Salim

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