The studies of Ge quantum dots on strained Si0.7Ge0.3 layer by photoluminescence and deep level transient spectroscopy

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Author(s):  
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2004 ◽  
Vol 241 (12) ◽  
pp. 2811-2815 ◽  
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E. K. Kim ◽  
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E. Yoon ◽  
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Vol 67 (20) ◽  
pp. 3016-3018 ◽  
Author(s):  
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L. Samuelson ◽  
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