Temperature Dependent Capacitance-Voltage And Deep Level Transient Spectroscopy Study Of Self-Assembled Ge Quantum Dots Embedded In P-type Silicon

Deep Level ◽

Spectroscopy Study ◽

Temperature Dependent ◽

Type Silicon ◽

Capacitance Voltage ◽

Ge Quantum Dots ◽

Transient Spectroscopy ◽

P Type

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

physica status solidi (b) ◽

10.1002/pssb.201600593 ◽

2016 ◽

Vol 254 (4) ◽

pp. 1600593

Author(s):

Eddy Simoen ◽

Suseendran Jayachandran ◽

Annelies Delabie ◽

Matty Caymax ◽

Marc Heyns

Keyword(s):

Deep Level ◽

Schottky Barriers ◽

Spectroscopy Study ◽

Type Silicon ◽

Transient Spectroscopy ◽

P Type

The studies of Ge quantum dots on strained Si0.7Ge0.3 layer by photoluminescence and deep level transient spectroscopy

Applied Surface Science ◽

10.1016/j.apsusc.2008.09.098 ◽

2009 ◽

Vol 255 (6) ◽

pp. 3548-3551 ◽

Cited By ~ 9

Author(s):

Zhensheng Tao ◽

Ning Zhan ◽

Hongbin Yang ◽

Yan Ling ◽

Zhenyang Zhong ◽

...

Keyword(s):

Quantum Dots ◽

Deep Level ◽

Ge Quantum Dots ◽

Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon

physica status solidi (c) ◽

10.1002/pssc.201200163 ◽

2012 ◽

Vol 9 (10-11) ◽

pp. 1992-1995 ◽

Cited By ~ 2

Author(s):

C. K. Tang ◽

L. Vines ◽

B. G. Svensson ◽

E. V. Monakhov

Keyword(s):

Deep Level ◽

Type Silicon ◽

Transient Spectroscopy ◽

P Type

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF[sub 3]/Ar plasma

10.1116/1.589304 ◽

1997 ◽

Vol 15 (3) ◽

pp. 623 ◽

Cited By ~ 7

Author(s):

G. Adegboyega

Keyword(s):

Deep Level ◽

Gate Oxide ◽

Spectroscopy Study ◽

Type Silicon ◽

Oxide Etching ◽

Ar Plasma ◽

Correlation of Surface Photovoltaic Technique with Deep Level Transient Spectroscopy for Iron Concentration Measurement in P‐Type Silicon Wafers

Journal of The Electrochemical Society ◽

10.1149/1.2085800 ◽

1991 ◽

Vol 138 (5) ◽

pp. 1424-1426 ◽

Cited By ~ 4

Author(s):

K. Ryoo ◽

W. E. Socha

Keyword(s):

Deep Level ◽

Iron Concentration ◽

Silicon Wafers ◽

Concentration Measurement ◽

Type Silicon ◽

Transient Spectroscopy ◽

P Type

Deep-level transient spectroscopy study of hole traps in p-type CdTe

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/6/39/014 ◽

1994 ◽

Vol 6 (39) ◽

pp. 7935-7940 ◽

Cited By ~ 3

Author(s):

J Szatkowski ◽

E Placzek-Popko ◽

A Hajdusianek

Keyword(s):

Deep Level ◽

Spectroscopy Study ◽

Transient Spectroscopy ◽

P Type

Isothermal deep-level transient spectroscopy study of metastable defects in hydrogen-implanted n-type silicon

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2006.01.053 ◽

2006 ◽

Vol 9 (1-3) ◽

pp. 288-291 ◽

Cited By ~ 1

Author(s):

Yutaka Tokuda ◽

Wakana Nakamura ◽

Hiroshi Terashima

Keyword(s):

Deep Level ◽

Spectroscopy Study ◽

Type Silicon ◽

Deep-Level Transient Spectroscopy Study of Hydrogen-Related Traps Formed by Wet Chemical Etching in Electron-Irradiated n-Type Silicon

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.1815 ◽

1998 ◽

Vol 37 (Part 1, No. 4A) ◽

pp. 1815-1816 ◽

Cited By ~ 10

Author(s):

Yutaka Tokuda

Keyword(s):

Chemical Etching ◽

Deep Level ◽

Spectroscopy Study ◽

Type Silicon ◽

Wet Chemical ◽

Wet Chemical Etching ◽

High resolution Deep Level Transient Spectroscopy of p-n diodes formed from p-type polycrystalline diamond on n-type silicon.

2008 Conference on Optoelectronic and Microelectronic Materials and Devices ◽

10.1109/commad.2008.4802081 ◽

2008 ◽

Author(s):

Karen D. Vernon-Parry ◽

Jan H. Evans-Freeman ◽

Niki Mitromara ◽

Paul W. May

Keyword(s):

High Resolution ◽

Deep Level ◽

Polycrystalline Diamond ◽

Type Silicon ◽

Transient Spectroscopy ◽

P Type

Depth profiles of the nickel donor center in p-type silicon diffused with dilute nickel measured by deep-level transient spectroscopy

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.091301 ◽

2014 ◽

Vol 53 (9) ◽

pp. 091301 ◽

Cited By ~ 3

Author(s):

Minoru Nakamura ◽

Susumu Murakami ◽

Haruhiko Udono

Keyword(s):

Deep Level ◽

Donor Center ◽

Depth Profiles ◽

Type Silicon ◽

Transient Spectroscopy ◽

P Type