Temperature-dependent ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films

2010 ◽  
Vol 256 (8) ◽  
pp. 2468-2473 ◽  
Author(s):  
Shan-Tao Zhang ◽  
Zhong Chen ◽  
Chong Zhang ◽  
Guo-Liang Yuan
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Temperature Dependent

scholarly journals Vanadium-Oxide-Based Thin Films with Ultra-High Thermo-Optic Coefficients at 1550 nm and 2000 nm Wavelengths

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 2002
Author(s):  
Mohamed Abdel-Rahman ◽  
Esam Bahidra ◽  
Ahmed Fauzi Abas
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Vanadium Oxide ◽  
Optical Communication ◽  
Spectroscopic Ellipsometry ◽  
Optical Constants ◽  
Tunable Filters ◽  
Temperature Dependent ◽  
Vanadium Sesquioxide ◽  
Vanadium Oxide Thin Films

In this paper, the temperature-dependent dielectric properties of vanadium-sesquioxide-based thin films are studied to assess their suitability for thermally tunable filters at optical communication wavelengths. Spectroscopic ellipsometry is utilized to measure the optical constants of vanadium oxide thin films at temperatures ranging from 25 °C to 65 °C. High thermo-optic coefficients (dn/dTs) were observed. The highest dn/dTs, measured at approximately 40 °C, were −8.4 × 10−3/°C and −1.05 × 10−2/°C at 1550 nm and 2000 nm, respectively.

Temperature Dependent Dielectric Properties of Ba[sub 0.8]Sr[sub 0.2]TiO[sub 3] Nanocrystalline Thin Films

2010 ◽  
Author(s):  
Soram Bobby Singh ◽  
H . Basantakumar Sharma ◽  
P. K. Giri ◽  
D. K. Goswami ◽  
A. Perumal ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Temperature Dependent ◽  
Nanocrystalline Thin Films

Dielectric Properties of Pb0.97La0.02Zr0.95Ti0.05O3 Antiferroelectric Thin Films Prepared at Different Annealing Temperatures

2011 ◽  
Vol 287-290 ◽  
pp. 2460-2463
Author(s):  
Wen Ping Geng ◽  
Xiu Jian Chou ◽  
Ya Ting Zhang ◽  
Mao Xiang Guo ◽  
Jun Liu
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Electric Field ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Dielectric Constant And Loss ◽  
Sol Gel Process ◽  
Plzt Thin Films

Pb0.97La0.02Zr0.95Ti0.05O3(PLZT) antiferroelectric thin films were prepared on Pt (111)/ Ti/SiO2/Si (100) substrates by a sol-gel process. The influences of annealing temperature on the structures and dielectric properties of the PLZT antiferroelectric thin films were investigated. And the phase structure and crystal orientation were studied by X-ray diffraction analyses (XRD). The antiferroelectric characterization of the PLZT thin films annealed at different temperature was demonstrated by P(polarization)-E(electric field) and C(capactitance)-E(electric field) curves. The maximum polarizations for the films annealed at 650°C, 700°C and 750°C were 35μC/cm2, 42μC/cm2and 47μC/cm2, respectively. The temperature dependent of the dielectric constant and loss was measured under the frequency 1, 10, 100 and 1000 kHz. The films annealed at 700°C have high (100)-preferred orientation and excellent dielectric properties.

IN-PLANE DIELECTRIC PROPERTIES OF BST THIN FILMS GROWN ON MgO SUBSTRATES USING THE THIN PEROVSKITE LAYERS FOR MICROWAVE TUNABLE ELECTRONICS

2006 ◽  
Vol 86 (1) ◽  
pp. 159-169 ◽  
Author(s):  
SU-JAE LEE ◽  
HAN-CHEOL RYU ◽  
YOUNG-TAE KIM ◽  
MIN-HWAN KWAK ◽  
SEUNGEON MOON ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Bst Thin Films
Sign in / Sign up

Export Citation Format

Share Document