Influence of deposition time on the microstructure and dielectric properties of AlN/Si thin films for enhanced hydrogen sensing application

: Thin films of PbS were prepared onto glass substrates by using a simple and cost effective CBD method. Influence of deposition time on structural, morphology and optical properties have been investigated systematically. The XRD analysis revealed that PbS films are polycrystalline with preferred orientation in (200) direction. Enhancement in crystallinity and PbS crystallite size has been observed with increase in deposition time. Formation of single phase PbS thin films has been further confirmed by Raman spectroscopy. The surface morphology analysis revealed the formation of prismatic and pebble-like PbS particles and with increase in deposition time these PbS particles are separated from each other without secondary growth. The data obtained from the EDX spectra shows the formation of high-quality but slightly sulfur rich PbS thin films over the entire range of deposition time studied. All films show increase in absorption with increase in deposition time and a strong absorption in the visible and sub-band gap regime of NIR range of the spectrum with red shift in band edge. The optical band gap shows decreasing trend, as deposition time increases but it is higher than the band gap of bulk PbS.

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IN-PLANE DIELECTRIC PROPERTIES OF BST THIN FILMS GROWN ON MgO SUBSTRATES USING THE THIN PEROVSKITE LAYERS FOR MICROWAVE TUNABLE ELECTRONICS

Integrated Ferroelectrics ◽

10.1080/10584580601085404 ◽

2006 ◽

Vol 86 (1) ◽

pp. 159-169 ◽

Cited By ~ 2

Author(s):

SU-JAE LEE ◽

HAN-CHEOL RYU ◽

YOUNG-TAE KIM ◽

MIN-HWAN KWAK ◽

SEUNGEON MOON ◽

...

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Bst Thin Films

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Optical and dielectric properties of n-type polycrystalline gallium ferrite (GaFeO3) thin films on Pt/Si substrates

Emergent Materials ◽

10.1007/s42247-021-00232-3 ◽

2021 ◽

Author(s):

Monali Mishra ◽

Smrutirekha Swain ◽

Sukalyan Dash ◽

Somdutta Mukherjee

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Si Substrates

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Studies on Magnetron-Sputtered NiO/Si3N4 Thin Films

International Journal of Nanoscience ◽

10.1142/s0219581x17600390 ◽

2018 ◽

Vol 17 (03) ◽

pp. 1760039

Author(s):

K. M. Dhanisha ◽

M. Manoj Christopher ◽

M. Abinaya ◽

P. Deepak Raj ◽

M. Sridharan

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Smooth Surface ◽

Deposition Time ◽

Si Substrate ◽

X Ray ◽

Coating Time ◽

Deposited Films ◽

Nio Films ◽

Scanning Electron

The present work deals with NiO/Si3N4 layers formed by depositing nickel oxide (NiO) thin films over silicon nitrate (Si3N[Formula: see text] thin films. NiO films were coated on Si3N4-coated Si substrate using magnetron sputtering method by changing duration of coating time and were analyzed using X-ray diffractometer, field emission-scanning electron microscopy, UV–Vis spectrophotometer and four-point probe method to study the influence of thickness on physical properties. Crystallinity of the deposited films increases with increase in thickness. All films exhibited spherical-like structure, and with increase in deposition time, grains are coalesced to form smooth surface morphology. The optical bandgap of NiO films was found to decrease from 3.31[Formula: see text]eV to 3.22[Formula: see text]eV with upsurge in the thickness. The film deposited for 30[Formula: see text]min exhibits temperature coefficient resistance of [Formula: see text]1.77%/[Formula: see text]C as measured at 80[Formula: see text]C.

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