Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

2010 ◽  
Vol 257 (3) ◽  
pp. 949-953 ◽  
Author(s):  
Changzhou Wang ◽  
Jiwei Zhai ◽  
Zhitang Song ◽  
Fei Shang ◽  
Xi Yao
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Multilayer Films ◽  
Data Retention ◽  
Access Memory ◽  
High Data

Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high-data-retention phase change random access memory applications

2015 ◽  
Vol 120 (2) ◽  
pp. 537-542 ◽  
Author(s):  
Le Li ◽  
Sannian Song ◽  
Zhonghua Zhang ◽  
Zhitang Song ◽  
Yan Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
High Data ◽  
Memory Applications

Superlattice-like film for high data retention and high speed phase change random access memory

2016 ◽  
Vol 120 ◽  
pp. 52-55 ◽  
Author(s):  
Le Li ◽  
Sannian Song ◽  
Zhonghua Zhang ◽  
Liangliang Chen ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
High Data

Phase Transition Behaviors and Thermal Conductivity of Ge Doped Sb2Te Thin Films for Phase Change Random Access Memory

2013 ◽  
Vol 367 ◽  
pp. 26-31
Author(s):  
Su Yuan Bai ◽  
Zhe Nan Tang ◽  
Zheng Xing Huang ◽  
Yi Feng Gu
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Thermal Conductivity ◽  
Phase Change ◽  
Composite Films ◽  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Ge Doping

The Ge doped Sb2Te thin films (Ge2Sb2Te5, Ge0.15Sb2Te and Ge0.61Sb2Te) were deposited by magnetron co-sputtering using Ge and Sb2Te targets. Ge doping effect on the phase transition behaviors and thermal conductivity of the composite films was investigated. Ge0.61Sb2Te thin films have higher crystallization temperature (~200°C), larger crystallization activation energy (~3.28 eV) , better data retention (~120.8 °Cfor 10 years) and lower thermal conductivity (~0.23 W/mK). Ge0.61Sb2Te thin films is considered to be a promising storage medium for phase change random access memory due to its better thermal stability and lower power consumption.

Scaling of Data Retention Statistics in Phase-Change Random Access Memory

2015 ◽  
Vol 36 (5) ◽  
pp. 454-456 ◽  
Author(s):  
Yongwoo Kwon ◽  
Byoungnam Park ◽  
Dae-Hwan Kang
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory

Reversible switching in bicontinuous structure for phase change random access memory application

Nanoscale ◽  
2021 ◽  
Vol 13 (8) ◽  
pp. 4678-4684
Author(s):  
Yan Cheng ◽  
Yonghui Zheng ◽  
Zhitang Song
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Bicontinuous Structure ◽  
Amorphous Si

A 3D nano-bicontinuous structure consisting of a reversible Sb2Te3 phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb2Te3 nano areas switch between the a- and f-structure.

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Temperature Dependence of Phase-Change Random Access Memory Cell

2006 ◽  
Vol 45 (5A) ◽  
pp. 3955-3958 ◽  
Author(s):  
X. S. Miao ◽  
L. P. Shi ◽  
H. K. Lee ◽  
J. M. Li ◽  
R. Zhao ◽  
...  
Keyword(s):  
Phase Change ◽  
Temperature Dependence ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Access Memory

scholarly journals Thermal characterization and analysis of phase change random access memory

2005 ◽  
Vol 98 (1) ◽  
pp. 013520 ◽  
Author(s):  
V. Giraud ◽  
J. Cluzel ◽  
V. Sousa ◽  
A. Jacquot ◽  
A. Dauscher ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Thermal Characterization ◽  
Access Memory
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