Room temperature growth of InxGa1−xN thin films by mixed source modified activated reactive evaporation

2011 ◽  
Vol 257 (20) ◽  
pp. 8623-8628 ◽  
Author(s):  
S.R. Meher ◽  
Kuyyadi P. Biju ◽  
Mahaveer K. Jain
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Temperature Growth ◽  
Reactive Evaporation ◽  
Activated Reactive Evaporation

Study of the hydride forming process of in-situ grown MgH2 thin films by activated reactive evaporation

2008 ◽  
Vol 516 (12) ◽  
pp. 4351-4359 ◽  
Author(s):  
R.J. Westerwaal ◽  
C.P. Broedersz ◽  
R. Gremaud ◽  
M. Slaman ◽  
A. Borgschulte ◽  
...  
Keyword(s):  
Thin Films ◽  
Forming Process ◽  
Reactive Evaporation ◽  
Activated Reactive Evaporation

Room-temperature growth of ZrO2 thin films using a novel hyperthermal oxygen-atom source

1999 ◽  
Vol 17 (1) ◽  
pp. 14-18 ◽  
Author(s):  
Elmar Wisotzki ◽  
Adam G. Balogh ◽  
Horst Hahn ◽  
John T. Wolan ◽  
Gar B. Hoflund
Keyword(s):  
Thin Films ◽  
Oxygen Atom ◽  
Room Temperature ◽  
Temperature Growth ◽  
Atom Source

Growth of InN thin films by modified activated reactive evaporation

2008 ◽  
Vol 41 (15) ◽  
pp. 155409 ◽  
Author(s):  
Kuyyadi P Biju ◽  
A Subrahmanyam ◽  
Mahaveer K Jain
Keyword(s):  
Thin Films ◽  
Reactive Evaporation ◽  
Activated Reactive Evaporation
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