Room-temperature growth of ZrO2 thin films using a novel hyperthermal oxygen-atom source

1999 ◽  
Vol 17 (1) ◽  
pp. 14-18 ◽  
Author(s):  
Elmar Wisotzki ◽  
Adam G. Balogh ◽  
Horst Hahn ◽  
John T. Wolan ◽  
Gar B. Hoflund
1991 ◽  
Vol 237 ◽  
Author(s):  
D. N. Dunn ◽  
P. Xu ◽  
L. D. Marks

ABSTRACTWe investigate the room temperature growth of evaporated Au thin films on both clean and dirty single crystal Ge (111) substrates. The annealing behavior of these films was then examined under low and high temperatures.


2018 ◽  
Vol 444 ◽  
pp. 71-74 ◽  
Author(s):  
Yuhei Shimizu ◽  
Kazuhiko Tonooka ◽  
Yoshiyuki Yoshida ◽  
Mitsuho Furuse ◽  
Hiroshi Takashima

1991 ◽  
Vol 222 ◽  
Author(s):  
J. F. Fan ◽  
K. Sugioka ◽  
K. Toyoda

ABSTRACTThin films of A12O3 were prepared by sequential surface chemical reaction of trimethylaluminum and hydrogen peroxide at low temperatures. It has been found that hydrogen peroxide reacts very easily with trimethylaluminum, resulting in growth of A12O3 at the temperature as low as the room temperature. Another favorable feature of the technique is that the growth of excellent A12O3 occurs identically wherever the reactants reach, making it possible to completely coat the surface of the sample with arbitrary shape.


2020 ◽  
Vol 816 ◽  
pp. 152532 ◽  
Author(s):  
Mohammad Shahnawaze Ansari ◽  
Mohd Hafiz Dzarfan Othman ◽  
Mohammad Omaish Ansari ◽  
Sana Ansari ◽  
Mohd Zamri Mohd Yusop

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