Experimental and numerical study of the chemical composition of WSex thin films obtained by pulsed laser deposition in vacuum and in a buffer gas atmosphere

2012 ◽  
Vol 258 (18) ◽  
pp. 7000-7007 ◽  
Author(s):  
S.N. Grigoriev ◽  
V.Yu. Fominski ◽  
A.G. Gnedovets ◽  
R.I. Romanov
1995 ◽  
Vol 86 (1-4) ◽  
pp. 165-169 ◽  
Author(s):  
T. Klotzbücher ◽  
W. Pfleging ◽  
M. Mertin ◽  
D.A. Wesner ◽  
E.W. Kreutz

2009 ◽  
Vol 255 (10) ◽  
pp. 5260-5263 ◽  
Author(s):  
D. Craciun ◽  
G. Socol ◽  
N. Stefan ◽  
G. Bourne ◽  
V. Craciun

1995 ◽  
Vol 4 (4) ◽  
pp. 370-374 ◽  
Author(s):  
W. Pfleging ◽  
T. Klotzbücher ◽  
D.A. Wesner ◽  
E.W. Kreutz

2014 ◽  
Vol 302 ◽  
pp. 124-128 ◽  
Author(s):  
D. Craciun ◽  
G. Socol ◽  
N. Stefan ◽  
G. Dorcioman ◽  
M. Hanna ◽  
...  

1993 ◽  
Vol 327 ◽  
Author(s):  
Randolph E. Treece ◽  
James S. Horwitz ◽  
Douglas B. Chrisey

AbstractThin films of diamond and diamond-like carbon (DLC) are technologically important materials that serve as hard, scratch resistant and chemically inert coatings for tools and optics. Recent calculations suggest that β-C3N4 should be harder than diamond. We have deposited carbon nitride (CNx) thin films by pulsed laser deposition. The films were grown from a graphite target in a nitrogen background. The nitrogen source was either (a) a N2 gas atmosphere, or (b) a N2+/N+ ion beam generated by a Kaufman ion gun. A wide range of deposition parameters were investigated, such as deposition pressure (0.3-900 mTorr N2), substrate temperature (50 and 600°C), and laser fluence (1-4 J/cm2) and laser repetition rate (1-10 Hz). The films have been characterized by Rutherford Backscattering Spectroscopy, thin-film X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. In general, the films were nitrogen deficient with a maximum nitrogen to carbon ratio (N/C) of 0.45 and a shift in the G band Raman peak consistent with amorphous CNx (a-CNx).


2012 ◽  
Vol 186 ◽  
pp. 160-163
Author(s):  
Agnieszka Radziszewska

The paper presented the structure (TEM), morphology and chemical composition (EDS) of the -Al-Mg thin films and Al-Mg-Ni multilayer obtained by pulsed laser deposition (PLD). This films were deposited using Nd:YAG laser. The different process parameters were applied. The Al-Mg film was obtained by application of the laser wavelength (=355 nm) and substrate temperature (Ts) 200 oC. Whereas the Al-Mg-Ni multilayer was produced at lower laser wavelength (=266 nm) and at room temperature of the substrate. For preparation of both films the same laser fluence (q=4.7 J/cm2) was used. The Al-Mg possessed nanocrystalline structure with the areas where only columnar Al crystals occurred. EDS of this thin film exhibited that in the nanocrystalline areas the chemical composition corresponded to the target content of Al and Mg. While Al-Mg-Ni multilayer composed of six layers. In this case Al-Mg layers were thinner then Ni layers. In the multilayer structure the fcc Al0.65Mg0.35 and fcc Ni phases was revealed.


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