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GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off
Applied Surface Science
◽
10.1016/j.apsusc.2017.04.247
◽
2017
◽
Vol 416
◽
pp. 1007-1012
◽
Cited By ~ 14
Author(s):
Fengwen Mu
◽
Yuki Morino
◽
Kathleen Jerchel
◽
Masahisa Fujino
◽
Tadatomo Suga
Keyword(s):
Wafer Bonding
◽
Room Temperature
◽
Direct Wafer Bonding
◽
Lift Off
Download Full-text
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Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
Journal of Crystal Growth
◽
10.1016/j.jcrysgro.2012.08.048
◽
2013
◽
Vol 370
◽
pp. 63-67
◽
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◽
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◽
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◽
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◽
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◽
...
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Thin Films
◽
Wafer Bonding
◽
Room Temperature
◽
Wafer Scale
◽
Glass Substrates
◽
Direct Wafer Bonding
◽
Movpe Growth
◽
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◽
Compositional Characterization
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Direct Wafer Bonding of SiC-SiC at Room Temperature by SAB Method
ECS Meeting Abstracts
◽
10.1149/ma2016-02/32/2074
◽
2016
◽
Keyword(s):
Wafer Bonding
◽
Room Temperature
◽
Direct Wafer Bonding
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Effects of surface activation time on Si-Si direct wafer bonding at room temperature
Materials Research Express
◽
10.1088/2053-1591/ac1aec
◽
2021
◽
Author(s):
Song Yang
◽
Yongfeng Qu
◽
Ningkang Deng
◽
Kang Wang
◽
Shi He
◽
...
Keyword(s):
Wafer Bonding
◽
Room Temperature
◽
Surface Activation
◽
Activation Time
◽
Direct Wafer Bonding
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Direct wafer bonding of Ga2O3–SiC at room temperature
Ceramics International
◽
10.1016/j.ceramint.2018.11.220
◽
2019
◽
Vol 45
(5)
◽
pp. 6552-6555
◽
Cited By ~ 9
Author(s):
Yang Xu
◽
Fengwen Mu
◽
Yinghui Wang
◽
Dapeng Chen
◽
Xin Ou
◽
...
Keyword(s):
Wafer Bonding
◽
Room Temperature
◽
Direct Wafer Bonding
Download Full-text
Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques
IEEE Transactions on Electron Devices
◽
10.1109/ted.2017.2722482
◽
2017
◽
Vol 64
(9)
◽
pp. 3601-3608
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Cited By ~ 12
Author(s):
Seong Kwang Kim
◽
Jae-Phil Shim
◽
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Keyword(s):
Wafer Bonding
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Direct Wafer Bonding
◽
Lift Off
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Direct Wafer Bonding of SiC-SiC at Room Temperature by SAB Method
ECS Transactions
◽
10.1149/07509.0077ecst
◽
2016
◽
Vol 75
(9)
◽
pp. 77-83
◽
Cited By ~ 3
Author(s):
F. Mu
◽
K. Iguchi
◽
H. Nakazawa
◽
Y. Takahashi
◽
M. Fujino
◽
...
Keyword(s):
Wafer Bonding
◽
Room Temperature
◽
Direct Wafer Bonding
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Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO
Journal of Crystal Growth
◽
10.1016/j.jcrysgro.2015.11.007
◽
2016
◽
Vol 435
◽
pp. 105-109
◽
Cited By ~ 2
Author(s):
K. Pantzas
◽
D.J. Rogers
◽
P. Bove
◽
V.E. Sandana
◽
F.H. Teherani
◽
...
Keyword(s):
Wafer Bonding
◽
Direct Wafer Bonding
◽
Lift Off
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Mechanisms for room temperature direct wafer bonding
Journal of Applied Physics
◽
10.1063/1.4794319
◽
2013
◽
Vol 113
(9)
◽
pp. 094905
◽
Cited By ~ 84
Author(s):
T. Plach
◽
K. Hingerl
◽
S. Tollabimazraehno
◽
G. Hesser
◽
V. Dragoi
◽
...
Keyword(s):
Wafer Bonding
◽
Room Temperature
◽
Direct Wafer Bonding
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Room temperature SiC-SiC direct wafer bonding by SAB methods
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
◽
10.23919/ltb-3d.2017.7947399
◽
2017
◽
Author(s):
Fengwen Mu
◽
Kenichi Iguchi
◽
Haruo Nakazawa
◽
Yoshikazu Takahashi
◽
Masahisa Fujino
◽
...
Keyword(s):
Wafer Bonding
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Room Temperature
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High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing
ECS Transactions
◽
10.1149/07509.0345ecst
◽
2016
◽
Vol 75
(9)
◽
pp. 345-353
◽
Cited By ~ 8
Author(s):
F. Kurz
◽
T. Plach
◽
J. Suss
◽
T. Wagenleitner
◽
D. Zinner
◽
...
Keyword(s):
Low Temperature
◽
High Precision
◽
Wafer Bonding
◽
Wafer Level
◽
3D Ics
◽
Direct Wafer Bonding
◽
Bonding Technology
Download Full-text
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