Effect of laser fluence and ambient gas pressure on surface morphology and chemical composition of hydroxyapatite thin films deposited using pulsed laser deposition

2018 ◽  
Vol 427 ◽  
pp. 458-463 ◽  
Author(s):  
Hiroaki Nishikawa ◽  
Tsukasa Hasegawa ◽  
Akiko Miyake ◽  
Yuichiro Tashiro ◽  
Satoshi Komasa ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Laser Fluence ◽  
Pulsed Laser ◽  
Gas Pressure ◽  
Laser Deposition ◽  
Ambient Gas

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Structure and chemical composition of BN thin films grown by pulsed-laser deposition (PLD)

1995 ◽  
Vol 86 (1-4) ◽  
pp. 165-169 ◽  
Author(s):  
T. Klotzbücher ◽  
W. Pfleging ◽  
M. Mertin ◽  
D.A. Wesner ◽  
E.W. Kreutz
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Chemical composition of ZrC thin films grown by pulsed laser deposition

2009 ◽  
Vol 255 (10) ◽  
pp. 5260-5263 ◽  
Author(s):  
D. Craciun ◽  
G. Socol ◽  
N. Stefan ◽  
G. Bourne ◽  
V. Craciun
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition
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