Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

Characterization of homoepitaxial diamond films by Electron microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088713 ◽

1991 ◽

Vol 49 ◽

pp. 880-881

Author(s):

D.P. Malta ◽

S.A. Willard ◽

R.A. Rudder ◽

G.C. Hudson ◽

J.B. Posthill ◽

...

Keyword(s):

Electron Microscopy ◽

Surface Defects ◽

Substrate Surface ◽

Diamond Films ◽

Chemical Vapor ◽

Polycrystalline Diamond ◽

Large Degree ◽

Rf Plasma ◽

Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Raman electronic effect for non‐destructive boron calibration in type IIb semiconducting diamond

Journal of Raman Spectroscopy ◽

10.1002/jrs.6165 ◽

2021 ◽

Author(s):

Shengya Zhang ◽

Zhuangfei Zhang ◽

Wencai Yi ◽

Xin Chen ◽

Xiaobing Liu

Keyword(s):

Electronic Effect ◽

Semiconducting Diamond ◽

Non Destructive

Development of Contact Materials for Semiconductor Devices. Ohmic Contacts on Semiconducting Diamond.

Materia Japan ◽

10.2320/materia.33.750 ◽

1994 ◽

Vol 33 (6) ◽

pp. 750-754

Author(s):

Takeshi Tachibana ◽

Kazushi Hayashi ◽

Koji Kobashi

Keyword(s):

Ohmic Contacts ◽

Semiconductor Devices ◽

Contact Materials ◽

Semiconducting Diamond

1. Microwave galvanomagnetic measurements on semiconducting diamond powder

Carbon ◽

10.1016/0008-6223(65)90067-9 ◽

1965 ◽

Vol 3 (3) ◽

pp. 323

Author(s):

J.K Furdyna

Keyword(s):

Diamond Powder ◽

Semiconducting Diamond

Magnetoresistance of a p-type Semiconducting Diamond

Proceedings of the Physical Society Section B ◽

10.1088/0370-1301/70/5/410 ◽

1957 ◽

Vol 70 (5) ◽

pp. 527-530 ◽

Cited By ~ 11

Author(s):

E W J Mitchell ◽

P T Wedepohl

Keyword(s):

Semiconducting Diamond ◽

P Type

Optical Phonon Effects in the Infra-red Spectrum of Acceptor Centres in Semiconducting Diamond

Proceedings of the Physical Society ◽

10.1088/0370-1328/79/6/307 ◽

1962 ◽

Vol 79 (6) ◽

pp. 1142-1153 ◽

Cited By ~ 88

Author(s):

S D Smith ◽

W Taylor

Keyword(s):

Optical Phonon ◽

Infra Red ◽

Semiconducting Diamond

Isochronal annealing of the electrical properties of electron-irradiated semiconducting diamond

Philosophical Magazine ◽

10.1080/14786437008226930 ◽

1970 ◽

Vol 22 (180) ◽

pp. 1243-1253 ◽

Cited By ~ 4

Author(s):

S. M. Horszowski ◽

J. A. J. Lourens

Keyword(s):

Electrical Properties ◽

Isochronal Annealing ◽

Semiconducting Diamond

Ultrafast photoconductive response of semiconducting diamond

Solid State Communications ◽

10.1016/0038-1098(81)90993-5 ◽

1981 ◽

Vol 38 (12) ◽

pp. 1223-1225 ◽

Cited By ~ 14

Author(s):

L.A. Vermeulen ◽

J.F. Young ◽

M.I. Gallant ◽

H.M. van Driel

Keyword(s):

Semiconducting Diamond

Cold Cathode of p-Type Semiconducting Diamond Films for Gas Discharge

Plasma Processes and Polymers ◽

10.1002/ppap.200732304 ◽

2007 ◽

Vol 4 (S1) ◽

pp. S942-S945 ◽

Cited By ~ 1

Author(s):

Akimitsu Hatta ◽

Hiroshi Nakatsuma ◽

Keishi Yanai ◽

Tsuyoshi Nishikawa

Keyword(s):

Diamond Films ◽

Gas Discharge ◽

Cold Cathode ◽

Semiconducting Diamond ◽

P Type

The optical and electronic properties of semiconducting diamond

Philosophical Transactions of the Royal Society of London Series A Physical and Engineering Sciences ◽

10.1098/rsta.1993.0017 ◽

1993 ◽

Vol 342 (1664) ◽

pp. 233-244 ◽

Cited By ~ 35

Keyword(s):

Absorption Spectrum ◽

Electronic Properties ◽

Valence Band ◽

Chemical Vapour ◽

Impurity Band ◽

Thermally Activated ◽

Boron Doped ◽

Optical And Electronic Properties ◽

Temperature Dependences ◽

Semiconducting Diamond

In this paper I review the evidence that shows that the optical and electronic properties of semiconducting diamond can be understood in terms of boron acceptors partially compensated by deep donors. In natural semiconducting diamond, in which the total impurity concentration is less than 1 ppm, there is a lot of fine structure in the acceptor absorption spectrum that is not fully understood, and the electrical conductivity is primarily associated with the thermally activated excitation of holes from the acceptor ground state to the valence band. Some of the problems regarding the analysis of Hall effect data in this material are discussed, including the temperature dependences of the scattering mechanisms, of the contribution from the split-off valence band and of the population of excited states. There are no adequate theoretical descriptions of any of these processes, and this leads to some uncertainties in the values of the parameters derived from the temperature dependence of the Hall coefficient. For boron-doped synthetic diamond, and thin film diamond grown by chemical vapour deposition (CVD), the defect concentrations are generally much higher, and much more inhomogeneous, than in natural semiconducting diamond. This results in a substantial broadening of the acceptor absorption spectrum and the electronic properties are greatly modified by increasing contributions from impurity band conduction as the acceptor concentrations are increased, leading to very low mobility values. For both poly crystalline and single crystal homoepitaxial CVD diamond, measurements of the electrical properties can be completely invalidated by the presence of a surface layer of non-diamond carbon.