Raman electronic effect for non‐destructive boron calibration in type IIb semiconducting diamond

Author(s):  
Shengya Zhang ◽  
Zhuangfei Zhang ◽  
Wencai Yi ◽  
Xin Chen ◽  
Xiaobing Liu
Author(s):  
J W Steeds

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.


Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).


Author(s):  
R.F. Sognnaes

Sufficient experience has been gained during the past five years to suggest an extended application of microreplication and scanning electron microscopy to problems of forensic science. The author's research was originally initiated with a view to develop a non-destructive method for identification of materials that went into objects of art, notably ivory and ivories. This was followed by a very specific application to the identification and duplication of the kinds of materials from animal teeth and tusks which two centuries ago went into the fabrication of the ivory dentures of George Washington. Subsequently it became apparent that a similar method of microreplication and SEM examination offered promise for a whole series of problems pertinent to art, technology and science. Furthermore, what began primarily as an application to solid substances has turned out to be similarly applicable to soft tissue surfaces such as mucous membranes and skin, even in cases of acute, chronic and precancerous epithelial surface changes, and to post-mortem identification of specific structures pertinent to forensic science.


2013 ◽  
Vol 64 (2) ◽  
pp. 21001 ◽  
Author(s):  
Jean-Luc Bodnar ◽  
Jean-Jacques Metayer ◽  
Kamel Mouhoubi ◽  
Vincent Detalle

1984 ◽  
Vol 72 (8-9) ◽  
pp. 339-343
Author(s):  
René Hoeg ◽  
Lars Taarnskov
Keyword(s):  

1953 ◽  
Vol 50 (2) ◽  
pp. 136-138 ◽  
Author(s):  
Georges Ambrosino ◽  
Pierre Pindrus
Keyword(s):  

1993 ◽  
Vol 90 (6) ◽  
pp. 823-828
Author(s):  
M. Mayos ◽  
J.M. Turón ◽  
P. Alexandre ◽  
J.L. Salon ◽  
M. Depeyris ◽  
...  
Keyword(s):  

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