Cold Cathode of p-Type Semiconducting Diamond Films for Gas Discharge

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

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Magnetoresistance of a p-type Semiconducting Diamond

Proceedings of the Physical Society Section B ◽

10.1088/0370-1301/70/5/410 ◽

1957 ◽

Vol 70 (5) ◽

pp. 527-530 ◽

Cited By ~ 11

Author(s):

E W J Mitchell ◽

P T Wedepohl

Keyword(s):

Semiconducting Diamond ◽

P Type

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DEPOSITION CARBON NANOSTRUCTURES BY SURFATRON GENERATED DISCHARGE

Acta Polytechnica ◽

10.14311/ap.2014.54.0389 ◽

2014 ◽

Vol 54 (6) ◽

pp. 389-393

Author(s):

Marina Davydova ◽

Jiri Smid ◽

Zdenek Hubicka ◽

Alexander Kromka

Keyword(s):

Carbon Nanostructures ◽

Treatment Time ◽

Diamond Films ◽

Diamond Surface ◽

Process Time ◽

Low Temperature Plasma ◽

Temperature Plasma ◽

Gas Concentration ◽

P Type ◽

Wave Discharge

Carbon nanostructures were deposited by surface wave discharge using various Ar/CH<sub>4</sub>/ CO<sub>2</sub> gas mixture ratios. The morphology was controlled by adjusting of gas concentration and was investigated by scanning electron microscopy (SEM). Also, the influence of the low temperature plasma treatment and process time on the wettability of the diamond films has been studied. The results indicate that for hydrogen termination of diamond surface indicate that the temperature as low as 400°C and treatment time of 15 min is sufficient to attain the p-type surface conductivity of diamond.

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Preparation of p-type polycrystalline diamond films and their applications to hole injection layers in amorphous SiC:H thin film light emitting diodes

Journal of Non-Crystalline Solids ◽

10.1016/s0022-3093(98)00350-0 ◽

1998 ◽

Vol 227-230 ◽

pp. 1156-1159 ◽

Cited By ~ 6

Author(s):

K. Chirakawikul ◽

T. Sujaridchai ◽

B. Ratwises ◽

D. Kruangam ◽

S. Panyakeow ◽

...

Keyword(s):

Thin Film ◽

Light Emitting Diodes ◽

Diamond Films ◽

Polycrystalline Diamond ◽

Hole Injection ◽

Light Emitting ◽

P Type

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Attempts to p-Dope Ultrananocrystalline Diamond Films in a Hot Filament Reactor

MRS Proceedings ◽

10.1557/proc-0956-j09-31 ◽

2006 ◽

Vol 956 ◽

Author(s):

Paul William May ◽

Matthew Hannaway

Keyword(s):

Vapour Deposition ◽

Film Growth ◽

Substrate Surface ◽

Diamond Films ◽

Chemical Vapour ◽

Grain Sizes ◽

Ultrananocrystalline Diamond ◽

The Individual ◽

P Type ◽

Hot Filament

ABSTRACTUltrananocrystalline diamond (UNCD) films have been deposited using hot filament chemical vapour deposition using Ar/CH4/H2 gas mixtures plus additions of B2H6 in an attempt to make p-type semiconducting films. With increasing additions of B2H6 from 0 to 40,000 ppm with respect to C, the film growth rate was found to decrease substantially, whilst the individual grain sizes increased from nm to μm. With 40,000 ppm of B2H6, crystals of boric oxide were found on the substrate surface, which slowly hydrolysed to boric acid on exposure to air. These results are rationalised using a model for UNCD growth based on competition for surface radical sites between CH3 and C atoms.

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