Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect

Through a systematic approach we show that the insertion of a thin alumina layer in between a PbS QD layer and an Au substrate can eliminate Fermi level pinning.

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Fermi Level Pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300005299 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 936-942 ◽

Cited By ~ 2

Author(s):

H. Witte ◽

A. Krtschil ◽

M. Lisker ◽

D. Rudloff ◽

J. Christen ◽

...

Keyword(s):

Fermi Level ◽

Deep Level ◽

Deep Levels ◽

Admittance Spectroscopy ◽

Zero Bias ◽

Fermi Level Pinning ◽

Organic Vapor ◽

Pinning Effect ◽

Metal Organic ◽

Transient Spectroscopy

In GaN layers grown by molecular beam epitaxy as well as metal organic vapor phase epitaxy significant differences were found in the appearance of deep defects detected by thermal admittance spectroscopy as compared for deep level transient spectroscopy measurements. While, thermal admittance spectroscopy measurements which were made under zero bias conditions only show thermal emissions at activation energies between 130 and 170 meV, further deep levels existing in these GaN layers were evidenced by transient spectrocopy. This discrepancy is explained by a pinning effect of the Fermi level at the metal / GaN interface induced by high a concentration of the deep levels showing up in thermal admittance spectroscopy. We compare our results with a GaAs:Te Schottky- diode as a refernec sample. Here, both spectroscopic methods give exactly the same deep level emissions.

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Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect

Physical Chemistry Chemical Physics ◽

10.1039/c8cp03740j ◽

2018 ◽

Vol 20 (33) ◽

pp. 21732-21738 ◽

Cited By ~ 6

Author(s):

Nanshu Liu ◽

Si Zhou ◽

Nan Gao ◽

Jijun Zhao

Keyword(s):

Fermi Level ◽

Schottky Barriers ◽

Great Promise ◽

Gallium Selenide ◽

Two Dimensional ◽

Fermi Level Pinning ◽

Pinning Effect

Monolayer gallium selenide (GaSe), an emerging two-dimensional semiconductor, holds great promise for electronics and optoelectronics.

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Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy

MRS Proceedings ◽

10.1557/proc-595-f99w11.82 ◽

1999 ◽

Vol 595 ◽

Author(s):

H. Witte ◽

A. Krtschil ◽

M. Lisker ◽

D. Rudloff ◽

J. Christen ◽

...

Keyword(s):

Fermi Level ◽

Deep Level ◽

Deep Levels ◽

Admittance Spectroscopy ◽

Zero Bias ◽

Fermi Level Pinning ◽

Organic Vapor ◽

Pinning Effect ◽

Metal Organic ◽

Transient Spectroscopy

AbstractIn GaN layers grown by molecular beam epitaxy as well as metal organic vapor phase epitaxy significant differences were found in the appearance of deep defects de-tected by thermal admittance spectroscopy as compared for deep level transient spectros-copy measurements. While, thermal admittance spectroscopy measurements which were made under zero bias conditions only show thermal emissions at activation energies between 130 and 170 meV, further deep levels existing in these GaN layers were evidenced by transient spectrocopy. This discrepancy is explained by a pinning effect of the Fermi level at the metal / GaN interface induced by high a concentration of the deep levels showing up in thermal admittance spectroscopy. We compare our results with a GaAs:Te Schottky- diode as a refernec sample. Here, both spectroscopic methods give exactly the same deep level emissions.

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