Thin-film multi-layer capacitors using Bi2Mg2/3Nb4/3O7 (BMNO) pyrochlore thin films via radio-frequency sputtering

2015 ◽  
Vol 15 (11) ◽  
pp. 1384-1388 ◽  
Author(s):  
Ji-Hyun Park ◽  
Ji-Ho Eom ◽  
Byeong-Ju Park ◽  
Ki-Tae Park ◽  
Soo-Yeol Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Radio Frequency ◽  
Radio Frequency Sputtering

Transmission Electron Microscopy Stjudy of Initerface Microstrucure in ZnO Thin Films Grown on Various Substrates (Glass,Au,Sl,α-Al2O3)

1996 ◽  
Vol 441 ◽  
Author(s):  
Y. Yoshino ◽  
S. Iwasa ◽  
H. Aoki ◽  
Y. Deguchi ◽  
Y. Yamamoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Radio Frequency ◽  
Amorphous Layer ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Axis Orientation ◽  
Radio Frequency Sputtering ◽  
Transmission Electron ◽  
Glass Interface

AbstractZinc oxide (ZnO) thin films have been grown by radio frequency sputtering on glass, Al, Au and R cut sapphire substrates. Microstructures of the ZnO / substrate interface have been observed by transmission electron microscope. The purpose of this study is to elucidate the crystal growth mechanism of ZnO thin films using various substrates that have different crystallinity and crystal structures. An amorphous layer with a thickness of about 5 nm is observed at the ZnO/glass interface, and c axis orientation perpendicular to the substrate is observed on this amorphous layer. Mianstructurts at the ZnO/buffer metal interface, on the other hand, are significantly different from those of ZnO/glass interface. A thick amorphous layer of about 15 nm is observed at the ZnO/Al interface, presumably consisting of Al2O3 interface layer material. ZnO thin film grown on Au buffer layers is distinctly different from both ZnO on glass and Al. No amorphous layer is formed at the ZnO/Au interface, and c axis orientation begins directly from the Au surface. Epitaxially grown ZnO thin film is confirmed on a R-cut sapphire substrate. These results dearly demonstrate that ZnO thin films prepared by radio frequency sputtering are strongly influenced by the substrate surface crystallinity at the topmost layer of the substrate.

Fabrication of ZnS Thin Film Buffer Layer in Solar Cell by Radio Frequency Sputtering Method

2014 ◽  
Vol 894 ◽  
pp. 386-390
Author(s):  
Zue Chin Chang ◽  
Yi Chen Lin ◽  
Chih Yuan Chen ◽  
Chien Chon Chen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Transmission Rate ◽  
Hexagonal Wurtzite Structure ◽  
Xrd Analysis ◽  
Electrical Measurement ◽  
Radio Frequency Sputtering ◽  
Substrate Temperatures

The present study aims to investigate the influence of Coring glass substrate temperature on the topography, deposition rate, crystal structure, optical, and electrical properties of ZnS thin films produced by magnetic radio frequency sputtering method. From plain view SEM micrographs, the pebble structure has shown in all ZnS thin films deposited at various substrate temperatures. Through higher substrate temperature, smaller ZnS grains can be obtained in the present study. From XRD analysis, ZnS thin film exhibits hexagonal Wurtzite structure. When thickness of ZnS thin film arrive 300nm, optical transmission rate can be above 85% regardless of substrate temperature and gets optical energy barrier of 3.9 eV. From electrical measurement, the variation of resistivity with temperature exhibits a linear relationship for ZnS thin film.

Radio frequency sputtering of ferrimagnetic thin films

1971 ◽  
Vol 21 (4-5) ◽  
pp. 558-562 ◽  
Author(s):  
R. Metselaar ◽  
P. Rem
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Radio Frequency Sputtering

scholarly journals Photocarrier generation in CuxO thin films deposited by radio frequency sputtering

2013 ◽  
Vol 102 (3) ◽  
pp. 032101 ◽  
Author(s):  
Thien Viet Pham ◽  
Manohar Rao ◽  
P. Andreasson ◽  
Yuan Peng ◽  
Junling Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Radio Frequency Sputtering
Sign in / Sign up

Export Citation Format

Share Document