Role of an oxide interface in a resistive switch

Author(s):  
Karuna Kumari ◽  
Subhasmita Kar ◽  
Ajay D. Thakur ◽  
S.J. Ray
Author(s):  
Yuanting Tang ◽  
Yongjie Chen ◽  
Xiao Liu ◽  
Chengxiong Wang ◽  
Yunkun Zhao ◽  
...  

The bifunctional role of noble metal/oxide interface in the activation of reactants is of vital importance in heterogeneous catalysis of water-gas shift (WGS) reaction. Herein, three types of shape-controlled TiO2...


Science ◽  
1999 ◽  
Vol 286 (5439) ◽  
pp. 507-509 ◽  
Author(s):  
Jose Maria De Teresa ◽  
Agnès Barthélémy ◽  
Albert Fert ◽  
Jean Pierre Contour ◽  
François Montaigne ◽  
...  

The role of the metal-oxide interface in determining the spin polarization of electrons tunneling from or into ferromagnetic transition metals in magnetic tunnel junctions is reported. The spin polarization of cobalt in tunnel junctions with an alumina barrier is positive, but it is negative when the barrier is strontium titanate or cerium lanthanite. The results are ascribed to bonding effects at the transition metal–barrier interface. The influence of the electronic structure of metal-oxide interfaces on the spin polarization raises interesting fundamental problems and opens new ways to optimize the magnetoresistance of tunnel junctions.


2015 ◽  
Vol 56 (1) ◽  
pp. 18-26 ◽  
Author(s):  
Kar Tean Tan ◽  
Christopher C. White ◽  
Donald Hunston ◽  
Justin M. Gorham ◽  
Michael J. Imburgia ◽  
...  

2017 ◽  
Vol 122 (2) ◽  
pp. 794-800 ◽  
Author(s):  
Robert M. Palomino ◽  
Pedro J. Ramírez ◽  
Zongyuan Liu ◽  
Rebecca Hamlyn ◽  
Iradwikanari Waluyo ◽  
...  

2015 ◽  
Vol 5 (3) ◽  
pp. 1521-1531 ◽  
Author(s):  
M. J. Muñoz-Batista ◽  
M. M. Ballari ◽  
A. E. Cassano ◽  
O. M. Alfano ◽  
A. Kubacka ◽  
...  

A spectro-kinetic approach unveils the key role of the oxide–oxide interface in CeO2–TiO2 UV and visible light-triggered photocatalysis.


2016 ◽  
Vol 120 (3) ◽  
pp. 1778-1784 ◽  
Author(s):  
Sanjaya D. Senanayake ◽  
Pedro J. Ramírez ◽  
Iradwikanari Waluyo ◽  
Shankhamala Kundu ◽  
Kumudu Mudiyanselage ◽  
...  

ChemSusChem ◽  
2008 ◽  
Vol 1 (11) ◽  
pp. 905-910 ◽  
Author(s):  
Hicham Idriss ◽  
Morgan Scott ◽  
Jordi Llorca ◽  
Sze C. Chan ◽  
William Chiu ◽  
...  

2005 ◽  
Vol 47 (1) ◽  
pp. 247-256 ◽  
Author(s):  
Bernard Pieraggi ◽  
Barry MacDougall ◽  
Robert A. Rapp

2002 ◽  
Vol 716 ◽  
Author(s):  
Ralph Jaccodine

AbstractThis paper discusses the issues that arise when ab excess of Si or SiO flux is used to adjust the Deal -Grove model to match the observed growth in the early stages of oxidation. The author uses the insight gained from the modeling of the oxidation of Si-Ge alloys as a background to the discussion. A recent simulation of the thin oxide problem by M. Uematsu et.al. invokes the role of “excess Si” near the interface to adjust the D&G reaction coefficient and also add additional flux to the growing oxide.This paper assesses some of the points in this model as well as the relation with sub bonded Si and/or the reaction barrier layer to oxidationmechanism. A recent proposal by Pasquarello et.al opens new insight into the way the interface may adjust to the growing oxide which challenges our previous mechanistic notions.


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