scholarly journals Electronic states of trans-polyacetylene, poly(p-phenylene vinylene) and sp-hybridised carbon species in amorphous hydrogenated carbon probed by resonant Raman scattering

Carbon ◽  
2009 ◽  
Vol 47 (10) ◽  
pp. 2481-2490 ◽  
Author(s):  
M. Rybachuk ◽  
J.M. Bell
Keyword(s):  
Raman Scattering ◽  
Electronic States ◽  
Phenylene Vinylene ◽  
Carbon Species ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Amorphous Hydrogenated Carbon

Resonant-Raman Scattering of ZnO Crystallites: the Quasi Nature of the LO Mode

2004 ◽  
Vol 831 ◽  
Author(s):  
Xiang-Bai Chen ◽  
John L. Morrison ◽  
Jesse Huso ◽  
Jonathan G. Metzger ◽  
Leah Bergman ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Single Crystal ◽  
Electronic States ◽  
Mode Frequency ◽  
Mode Behavior ◽  
Raman Modes ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Zno Single Crystal ◽  
Size Confinement

ABSTRACTThe Raman modes of ZnO crystallites of the wurtzite structure were investigated via micro-Raman scattering at resonant and out-of-resonant conditions. The E2 mode was the predominant mode in the spectra for out-of-resonant conditions. For the resonant conditions one mode at the spectral range of the LO's of ZnO single crystal was the predominant mode: its frequency was found to be at ∼ 580 cm−1. The A1(LO) and the E1(LO) modes of a reference ZnO single crystal were found to be 568 cm−1 and 586 cm−1 respectively. Two possible mechanisms were considered that may explain the mode frequency of the crystallites: it can be regarded as a confined E1(LO) mode or as a quasi-LO mode. The UV-photoluminescence of the crystallites was found to have the same energy as that of the single crystal ∼ 3.3 eV, indicating the lack of size-confinement of the electronic states in the crystallites, and inter alia that of the phonon states. Our analysis indicated that the observed frequency can be explained in terms of Loudon's model of a quasi-mode behavior which is due to the crystallites tilt.

Photoreflectance and Resonant Raman Scattering in Short Period Si/Ge Superlattices on Ge (001) and Si (001)

1991 ◽  
Vol 220 ◽  
Author(s):  
U. Menczigar ◽  
K. Eberl ◽  
G. Abstreiter
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Electronic States ◽  
Optical Phonons ◽  
Short Period ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Etalon Effect

ABSTRACTShort period Si/Ge superlattices have been grown on Ge (001) and Si (001) substrates by molecular beam epitaxy. The optical properties of the superlattices have been studied with photoreflectance. (PR) and resonant Raman scattering (RRS). With PR we are able to observe new, structural induced transitions for all superlattices which are related to E0-and E1-like gaps. The analysis of PR spectra is complicated by an optical etalon effect if the samples are sufficently thick. The E1-like transitions in the range between 1.9eV and 2.7eV are also studied with RRS. Due to the confinement of the optical phonons in the Ge and Si layers RRS is able to probe the bandstructure in each layer seperately. Localized electronic states in the Ge layers can be observed with RRS for a Si4Ge18 superlattice and are compared with PR measurements.

Resonant Raman scattering in GaAsN: Mixing, localization, and impurity band formation of electronic states

2003 ◽  
Vol 67 (20) ◽  
Author(s):  
G. Bachelier ◽  
A. Mlayah ◽  
M. Cazayous ◽  
J. Groenen ◽  
A. Zwick ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Electronic States ◽  
Impurity Band ◽  
Band Formation ◽  
Resonant Raman ◽  
Resonant Raman Scattering

scholarly journals Resonant Raman scattering of ZnSxSe1−x solid solutions: the role of S and Se electronic states

2016 ◽  
Vol 18 (11) ◽  
pp. 7632-7640 ◽  
Author(s):  
M. Dimitrievska ◽  
H. Xie ◽  
A. J. Jackson ◽  
X. Fontané ◽  
M. Espíndola-Rodríguez ◽  
...  
Keyword(s):  
Experimental Study ◽  
Raman Scattering ◽  
Solid Solutions ◽  
Electronic States ◽  
Raman Mode ◽  
Matter Interaction ◽  
Resonant Raman ◽  
Resonant Raman Scattering

A combined theoretical and experimental study of the enhancement in the Raman mode intensities of ZnSSe compounds, under various resonant conditions, is presented, leading to more detailed insights into the role of chalcogen electronic states in the photon–matter interaction.

Sign in / Sign up

Export Citation Format

Share Document