scholarly journals Twisted graphene in graphite: Impact on surface potential and chemical stability

Carbon ◽  
2021 ◽  
Vol 176 ◽  
pp. 431-439
Author(s):  
Tuan-Hoang Tran ◽  
Raul D. Rodriguez ◽  
Marco Salerno ◽  
Aleksandar Matković ◽  
Christian Teichert ◽  
...  
Author(s):  
M. Pan ◽  
J.M. Cowley

Electron microdiffraction patterns, obtained when a small electron probe with diameter of 10-15 Å is directed to run parallel to and outside a flat crystal surface, are sensitive to the surface nature of the crystals. Dynamical diffraction calculations have shown that most of the experimental observations for a flat (100) face of a MgO crystal, such as the streaking of the central spot in the surface normal direction and (100)-type forbidden reflections etc., could be explained satisfactorily by assuming a modified image potential field outside the crystal surface. However the origin of this extended surface potential remains uncertain. A theoretical analysis by Howie et al suggests that the surface image potential should have a form different from above-mentioned image potential and also be smaller by several orders of magnitude. Nevertheless the surface potential distribution may in practice be modified in various ways, such as by the adsorption of a monolayer of gas molecules.


2016 ◽  
Vol 136 (2) ◽  
pp. 86-92 ◽  
Author(s):  
Daomin Min ◽  
Shengtao Li ◽  
Guochang Li ◽  
George Chen

2019 ◽  
Author(s):  
HanByul Chang ◽  
Paul Ohno ◽  
Yangdongling Liu ◽  
Franz Geiger

We report the detection of charge reversal induced by the adsorption of a cationic polyelectrolyte, poly(allylamine) hydrochloride (PAH), to buried supported lipid bilayers (SLBs), used as idealized model biological membranes. We observe changes in the surface potential in isolation from other contributors to the total SHG response by extracting the phase-shifted potential-dependent third-order susceptibility from the overall SHG signal. We demonstrate the utility of this technique in detecting both the sign of the surface potential and the point of charge reversal at buried interfaces without any prior information or complementary techniques<i>.</i>Furthermore, isolation of the second-order susceptibility contribution from the overall SHG response allows us to directly monitor changes in the Stern Layer. Finally, we characterize the Stern and Diffuse Layers over single-component SLBs formed from three different zwitterionic lipids of different gel-to-fluid phase transition temperatures (T<sub>m</sub>s). We determine whether the surface potential changes with the physical phase state (gel, transitioning, or fluid) of the SLB and incorporate 20 percent of negatively charged lipids to the zwitterionic SLB to investigate how the surface potential changes with surface charge.


2019 ◽  
Vol 9 (4) ◽  
pp. 504-511
Author(s):  
Sikha Mishra ◽  
Urmila Bhanja ◽  
Guru Prasad Mishra

Introduction: A new analytical model is designed for Workfunction Modulated Rectangular Recessed Channel-Silicon On Insulator (WMRRC-SOI) MOSFET that considers the concept of groove gate and implements an idea of workfunction engineering. Methods: The impact of Negative Junction Depth (NJD) and oxide thickness (tox) are analyzed on device performances such as Sub-threshold Slope (SS), Drain Induced Barrier Lowering (DIBL) and threshold voltage. Results: The results of the proposed work are evaluated with the Rectangular Recessed Channel-Silicon On Insulator (RRC-SOI) MOSFET keeping the metal workfunction constant throughout the gate region. Furthermore, an analytical model is developed using 2D Poisson’s equation and threshold voltage is estimated in terms of minimum surface potential. Conclusion: In this work, the impact of Negative Junction Depth (NJD) on minimum surface potential and the drain current are also evaluated. It is observed from the analysis that the analog switching performance of WMRRC-SOI MOSFET surpasses RRC-SOI MOSFET in terms of better driving capability, high Ion/Ioff ratio, minimized Short Channel Effects (SCEs) and hot carrier immunity. Results are simulated using 2D Sentaurus TCAD simulator for validation of the proposed structure.


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