Control of chemical states on magnetic properties of Co-doped ZnO films prepared by oxidizing evaporated Co-Zn film with different growth modes

2018 ◽  
Vol 44 (6) ◽  
pp. 7172-7179 ◽  
Author(s):  
Guojian Li ◽  
Huimin Wang ◽  
Yang Gao ◽  
Shiying Liu ◽  
Renxiu Tian ◽  
...  
2006 ◽  
Vol 296 (2) ◽  
pp. 135-140 ◽  
Author(s):  
Xue-Chao Liu ◽  
Er-Wei Shi ◽  
Zhi-Zhan Chen ◽  
Hua-Wei Zhang ◽  
Li-Xin Song ◽  
...  

2007 ◽  
Vol 316 (2) ◽  
pp. e203-e206 ◽  
Author(s):  
Anna Zukova ◽  
Arunas Teiserskis ◽  
V. Kazlauskiene ◽  
Y.K. Gun’ko ◽  
Sebastiaan van Dijken

2008 ◽  
Vol 78 (10) ◽  
Author(s):  
Y. Fukuma ◽  
F. Odawara ◽  
H. Asada ◽  
T. Koyanagi

2010 ◽  
Vol 173 (1-3) ◽  
pp. 7-10 ◽  
Author(s):  
H. Sakuma ◽  
Y. Watanabe ◽  
K. Aramaki ◽  
K.S. Yun ◽  
K. Ishii ◽  
...  

2007 ◽  
Vol 307 (1) ◽  
pp. 14-18 ◽  
Author(s):  
Xue-Chao Liu ◽  
Er-Wei Shi ◽  
Zhi-Zhan Chen ◽  
Hua-Wei Zhang ◽  
Bo-Yuan Chen ◽  
...  

2019 ◽  
Vol 359 ◽  
pp. 390-395 ◽  
Author(s):  
Hui Sun ◽  
Sheng-Chi Chen ◽  
Chung-Hsien Wang ◽  
Yu-Wei Lin ◽  
Chao-Kuang Wen ◽  
...  

2015 ◽  
Vol 395 ◽  
pp. 28-33 ◽  
Author(s):  
O. Karzazi ◽  
K.C. Sekhar ◽  
A. El Amiri ◽  
E.K. Hlil ◽  
O. Conde ◽  
...  

2010 ◽  
Vol 24 (15n16) ◽  
pp. 2992-2998 ◽  
Author(s):  
C.-W. ZOU ◽  
R.-Q. CHEN ◽  
E. HAEMMERLE ◽  
W. GAO

P -type ( Al , N ) co-doped ZnO films have been prepared by thermal oxidation of sputtered Zn 3 N 2: Al precursor films. The Zn 3 N 2: Al precursors are deposited by RF magnetron sputter and then annealed in oxygen atmosphere at different temperatures. The doped ZnO films are characterized by XRD, XPS and Hall effect measurement. The results indicate that the ZnO films only show p -type conductivity with an annealing in a temperature window: ZnO films show the best p -type characteristics with a hole concentration of 4.2 × 1017 cm -3, mobility of 0.52 cm/V.s and resistivity of 28Ωcm after an annealing at 550°C. Using these p -type ZnO films, ZnO p - n junctions are prepared which show good diode characteristics. The chemical states of N and Al dopants in the ZnO host material are investigated by XPS method after annealing at different temperatures; and the doping mechanisms are discussed based on the XPS results.


2007 ◽  
Vol 20 (2) ◽  
pp. 025208 ◽  
Author(s):  
Xue-Chao Liu ◽  
Er-Wei Shi ◽  
Zhi-Zhan Chen ◽  
Bo-Yuan Chen ◽  
Tao Zhang ◽  
...  

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