P-TYPE ALUMINIUM-NITROGEN CO-DOPED ZnO FILMS PREPARED BY THERMAL OXIDATION OF SPUTTERED Zn3N2:Al PRECURSORS

P -type ( Al , N ) co-doped ZnO films have been prepared by thermal oxidation of sputtered Zn 3 N 2: Al precursor films. The Zn 3 N 2: Al precursors are deposited by RF magnetron sputter and then annealed in oxygen atmosphere at different temperatures. The doped ZnO films are characterized by XRD, XPS and Hall effect measurement. The results indicate that the ZnO films only show p -type conductivity with an annealing in a temperature window: ZnO films show the best p -type characteristics with a hole concentration of 4.2 × 1017 cm -3, mobility of 0.52 cm/V.s and resistivity of 28Ωcm after an annealing at 550°C. Using these p -type ZnO films, ZnO p - n junctions are prepared which show good diode characteristics. The chemical states of N and Al dopants in the ZnO host material are investigated by XPS method after annealing at different temperatures; and the doping mechanisms are discussed based on the XPS results.

Download Full-text

P-Doped p-Type ZnΟ Films Deposited by Sputtering and Diffusing

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.557-559.1984 ◽

2012 ◽

Vol 557-559 ◽

pp. 1984-1987

Author(s):

Hui Qun Zhu ◽

Yu Ming Li ◽

Jun Long Li ◽

Ling Sun

Keyword(s):

Hole Concentration ◽

Hall Effect Measurement ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

Phosphorus Concentration ◽

X Ray Diffraction ◽

Si Substrates ◽

Measurement Results ◽

Doped Zno ◽

P Type

P-doped ZnO thin films were prepared on different Si substrates by RF magnetron sputtering in Ar and O2 mixed atmosphere. The P-doped ZnO films were changed from n-type to p-type by phosphorus diffusing from the n-Si substrates with higher phosphorus concentration into the ZnO films during depositing. The crystal structure of the ZnO films was examined by X-ray diffraction and confirmed to belong to wurtzite and highly c-axis oriented primarily perpendicular to the substrate. The Hall effect measurement results show that the corresponding hole concentration and risistivity of the P-doped ZnO film was 8.982×1017 cm-3 and 1.489 Ω•cm respectively. This reveals that the P-doped ZnO thin film is really p-type behavior.

Download Full-text

Control of chemical states on magnetic properties of Co-doped ZnO films prepared by oxidizing evaporated Co-Zn film with different growth modes

Ceramics International ◽

10.1016/j.ceramint.2018.01.162 ◽

2018 ◽

Vol 44 (6) ◽

pp. 7172-7179 ◽

Cited By ~ 3

Author(s):

Guojian Li ◽

Huimin Wang ◽

Yang Gao ◽

Shiying Liu ◽

Renxiu Tian ◽

...

Keyword(s):

Magnetic Properties ◽

Zno Films ◽

Growth Modes ◽

Chemical States ◽

Doped Zno ◽

Co Doped

Download Full-text

Obtainable P-Type ZnO Film Doped with Li by Sol-Gel Method

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.734.796 ◽

2015 ◽

Vol 734 ◽

pp. 796-801 ◽

Cited By ~ 3

Author(s):

Ting Ting Wang ◽

Miao Miao Dai ◽

Ya Jun Yan ◽

Hong Zhang ◽

Yi Min Yu

Keyword(s):

Hole Concentration ◽

Sol Gel ◽

Green Emission ◽

Hall Effect Measurement ◽

Zno Films ◽

Zno Film ◽

Oriented Growth ◽

Coating Method ◽

Thermal Annealing Process ◽

P Type

A series of Li-doped zinc oxide ( ZnO ) thin films were deposited on quartz glass by sol-gel and spin coating method. Their p-type conductivities could be achieved by subsequently thermal annealing process, which were characterized by Hall effect measurement. An optimized result with resistivity of 46.8 Ω cm, Hall mobility of 1.35 cm2/V s, and hole concentration of 9.89×1016 cm-3 was achieved at the annealing temperature of 700 °C. The films exhibited highly (002) oriented growth in all the cases. Strong green emission centered at 510 nm was observed by photoluminescence spectra in Li-doped ZnO films at room temperature.

Download Full-text

P-Type Conductive Behaviors of AlN Co-Doped ZnO Films Deposited by the Atomic Layer Deposition

Supplemental Proceedings ◽

10.1002/9781118357002.ch3 ◽

2012 ◽

pp. 19-25

Author(s):

Yu-Mi Kim ◽

Kwang-Seok Jeong ◽

Ho-Jin Yun ◽

Seung-Dong Yang ◽

Sang-Youl Lee ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Zno Films ◽

Layer Deposition ◽

Doped Zno ◽

P Type ◽

Co Doped

Download Full-text

Effect of oxidation temperature on the ferromagnetism of Co doped ZnO films via thermal oxidation of electrodeposited Co/Zn bilayers

Ceramics International ◽

10.1016/j.ceramint.2017.06.157 ◽

2017 ◽

Vol 43 (15) ◽

pp. 12724-12730 ◽

Cited By ~ 2

Author(s):

Yang Gao ◽

Guojian Li ◽

Jianhao Wang ◽

Zhao Wang ◽

Shiying Liu ◽

...

Keyword(s):

Thermal Oxidation ◽

Oxidation Temperature ◽

Zno Films ◽

Doped Zno ◽

Co Doped

Download Full-text

Effects of magnesium on phosphorus chemical states and p-type conduction behavior of phosphorus-doped ZnO films

The Journal of Chemical Physics ◽

10.1063/1.4775840 ◽

2013 ◽

Vol 138 (3) ◽

pp. 034704 ◽

Cited By ~ 3

Author(s):

Jichao Li ◽

Yongfeng Li ◽

Bin Yao ◽

Ying Xu ◽

Shiwang Long ◽

...

Keyword(s):

Zno Films ◽

Conduction Behavior ◽

Chemical States ◽

Doped Zno ◽

P Type ◽

Phosphorus Doped ◽

Type Conduction

Download Full-text

Realization of p-type Se–N co-doped ZnO films by radio-frequency magnetron sputtering

Materials Letters ◽

10.1016/j.matlet.2013.07.008 ◽

2013 ◽

Vol 108 ◽

pp. 183-185 ◽

Cited By ~ 7

Author(s):

Hui Cai ◽

Hongbin Xu ◽

Zhizhen Ye ◽

Jingyun Huang

Keyword(s):

Magnetron Sputtering ◽

Radio Frequency ◽

Radio Frequency Magnetron ◽

Zno Films ◽

Radio Frequency Magnetron Sputtering ◽

Doped Zno ◽

P Type ◽

Co Doped

Download Full-text

Enhanced Electrical Properties and Stability of P-Type Conduction in ZnO Transparent Semiconductor Thin Films by Co-Doping Ga and N

Coatings ◽

10.3390/coatings10111069 ◽

2020 ◽

Vol 10 (11) ◽

pp. 1069

Author(s):

Chien-Yie Tsay ◽

Wan-Yu Chiu

Keyword(s):

Thin Films ◽

Hole Concentration ◽

Sol Gel ◽

Co Doping ◽

Semiconductor Thin Films ◽

Doped Zno ◽

Transparent Semiconductor ◽

P Type ◽

Type Conduction ◽

Co Doped

P-type ZnO transparent semiconductor thin films were prepared on glass substrates by the sol-gel spin-coating process with N doping and Ga–N co-doping. Comparative studies of the microstructural features, optical properties, and electrical characteristics of ZnO, N-doped ZnO (ZnO:N), and Ga–N co-doped ZnO (ZnO:Ga–N) thin films are reported in this paper. Each as-coated sol-gel film was preheated at 300 °C for 10 min in air and then annealed at 500 °C for 1 h in oxygen ambient. X-ray diffraction (XRD) examination confirmed that these ZnO-based thin films had a polycrystalline nature and an entirely wurtzite structure. The incorporation of N and Ga–N into ZnO thin films obviously refined the microstructures, reduced surface roughness, and enhanced the transparency in the visible range. X-ray photoelectron spectroscopy (XPS) analysis confirmed the incorporation of N and Ga–N into the ZnO:N and ZnO:Ga–N thin films, respectively. The room temperature PL spectra exhibited a prominent peak and a broad band, which corresponded to the near-band edge emission and deep-level emission. Hall measurement revealed that the ZnO semiconductor thin films were converted from n-type to p-type after incorporation of N into ZnO nanocrystals, and they had a mean hole concentration of 1.83 × 1015 cm−3 and a mean resistivity of 385.4 Ω·cm. In addition, the Ga–N co-doped ZnO thin film showed good p-type conductivity with a hole concentration approaching 4.0 × 1017 cm−3 and a low resistivity of 5.09 Ω·cm. The Ga–N co-doped thin films showed relatively stable p-type conduction (>three weeks) compared with the N-doped thin films.

Download Full-text