Evolution of microstructure and electrical properties of Aurivillius phase (CaBi4Ti4O15)1-(Bi4Ti3O12) ceramics

2018 ◽  
Vol 44 (8) ◽  
pp. 9168-9173 ◽  
Author(s):  
Bo Wu ◽  
Jian Ma ◽  
Wenjuan Wu ◽  
Min Chen
Keyword(s):  
Electrical Properties ◽  
Aurivillius Phase ◽  
Evolution Of Microstructure ◽  
Bi4ti3o12 Ceramics

Dielectric, Ferroelectric and Electrical Properties of Bi4Ti3O12 Ceramics with Nd/V and Nd/Nb Co-Doping

2008 ◽  
Vol 53 (3) ◽  
pp. 1612-1616 ◽  
Author(s):  
Jin Soo Kim ◽  
Byung Chun Choi ◽  
Jung Hyun Jeong ◽  
Young Woo No ◽  
Su Tae Chung ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Co Doping ◽  
Bi4ti3o12 Ceramics

Charge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced Permittivity

2013 ◽  
Vol 854 ◽  
pp. 125-133 ◽  
Author(s):  
Larysa Khomenkova ◽  
Xavier Portier ◽  
Abdelilah Slaoui ◽  
Fabrice Gourbilleau
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Charge Trapping ◽  
Dielectric Films ◽  
Radio Frequency Magnetron Sputtering ◽  
Hafnium Silicate ◽  
Evolution Of Microstructure

Hafnium silicate dielectric films were fabricated by radio frequency magnetron sputtering. Their microstructure and electrical properties were studied versus annealing treatment. The evolution of microstructure and the formation of alternated HfO2-rich and SiO2-rich layers were observed and explained by surface directed spinodal decomposition. The stable tetragonal HfO2 phase was formed upon an annealing at 1000-1100°C. The control of annealing temperature allowed the memory window to be achieved and to be tuned as well as the dielectric constant to be enhanced.

Structural and electrical properties of four-layers Aurivillius phase BaBi3.5Nd0.5Ti4O15 ceramics

2014 ◽  
Vol 40 (4) ◽  
pp. 5765-5769 ◽  
Author(s):  
C.L. Diao ◽  
H.W. Zheng ◽  
Y.Z. Gu ◽  
W.F. Zhang ◽  
L. Fang
Keyword(s):  
Electrical Properties ◽  
Aurivillius Phase ◽  
Structural And Electrical Properties

Evolution of microstructure and opto-electrical properties in boron doped nc-Si:H films deposited by HW-CVD method

2014 ◽  
Vol 585 ◽  
pp. 523-528 ◽  
Author(s):  
V.S. Waman ◽  
M.M. Kamble ◽  
S.S. Ghosh ◽  
A.H. Mayabadi ◽  
B.B. Gabhale ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cvd Method ◽  
Boron Doped ◽  
Evolution Of Microstructure

scholarly journals The effect of Nd substitution on the electrical properties of Bi3NbTiO9 Aurivillius phase ceramics

2009 ◽  
Vol 106 (4) ◽  
pp. 044106 ◽  
Author(s):  
Hongtao Zhang ◽  
Haixue Yan ◽  
Michael J. Reece
Keyword(s):  
Electrical Properties ◽  
Aurivillius Phase ◽  
Nd Substitution

Effect of Nd and Nd/Nb Doping on Dielectric, Ferroelectric and Electrical Properties of Bi4Ti3O12 Ceramics

2009 ◽  
Vol 54 (9(2)) ◽  
pp. 906-910 ◽  
Author(s):  
JinSoo Kim ◽  
YuSung Kim ◽  
ByungChun Choi ◽  
JungHyun Jeong ◽  
SuTae Chung ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Nb Doping ◽  
Bi4ti3o12 Ceramics
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