Structural phase instability, mixed-phase, and energy band gap change in BiFeO3 under lattice strain effect from first-principles investigation

We report a first-principles investigation on BN dopped monolayer graphene sheet and examined the electronic band structure and band gaps in equilibrium state and under strain. The obtained results reveal that the doping of B-N pairs on the hexagonal sheet can open the gap at the Dirac-like point. With heavy doping and more B-N bonds the energy bad gap is found to be larger. Upon tensile deformation, the dopped BCN monolayer sheet represents a strong anisotropic stress-strain relation. Detailed strain-gap relation investigation reveals that the energy band gap presents desperate variation trends for strain applied along and direction. Versatile band-gap modulation schemes can then be obtained through direction-dependent strain engineering of the BCN nanosheet..

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Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.610-613.598 ◽

2009 ◽

Vol 610-613 ◽

pp. 598-603

Author(s):

Lan Zhao ◽

Zheng Xiong Lu ◽

Cai Jing Cheng ◽

De Gang Zhao ◽

Jian Jun Zhu ◽

...

Keyword(s):

Thin Films ◽

Band Gap ◽

Energy Band ◽

Lattice Strain ◽

Energy Gap ◽

Lattice Mismatch ◽

Lattice Relaxation ◽

Epitaxial Thin Films ◽

Energy Band Gap ◽

Bowing Parameter

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.

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No Resistive Normal Electrons in Beginning Superconducting States

Mathematics ◽

10.3390/math8091512 ◽

2020 ◽

Vol 8 (9) ◽

pp. 1512

Author(s):

Changho Seo ◽

Seongsoo Cho ◽

Je Huan Koo

Keyword(s):

Band Gap ◽

Energy Band ◽

Energy Band Gap

We investigate why normal electrons in superconductors have no resistance. Under the same conditions, the band gap is reduced to zero as well, but normal electrons at superconducting states are condensed into this virtual energy band gap.

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Insights into the structural, electronic and optical properties of MgA2B4(A = Sc, Y; B = S, Se) spinel compounds: Direct energy band gap materials

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.105736 ◽

2021 ◽

Vol 127 ◽

pp. 105736

Author(s):

Muhammad Saeed ◽

Zubaida Noor ◽

Amel Laref ◽

Hind Althib ◽

Tahani H. Flemban ◽

...

Keyword(s):

Optical Properties ◽

Band Gap ◽

Energy Band ◽

Energy Band Gap ◽

Electronic And Optical Properties ◽

Spinel Compounds ◽

Direct Energy

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Energy Band Gap Studies of CdS Nanomaterials

Journal of Nano Research ◽

10.4028/www.scientific.net/jnanor.3.97 ◽

2008 ◽

Vol 3 ◽

pp. 97-102 ◽

Cited By ~ 17

Author(s):

Dinu Patidar ◽

K.S. Rathore ◽

N.S. Saxena ◽

Kananbala Sharma ◽

T.P. Sharma

Keyword(s):

Optical Absorption ◽

Band Gap ◽

Energy Band ◽

Chemical Method ◽

Optical Absorption Spectroscopy ◽

Cds Nanoparticles ◽

X Ray Diffraction ◽

Energy Band Gap ◽

X Ray ◽

Simple Chemical

The CdS nanoparticles of different sizes are synthesized by a simple chemical method. Here, CdS nanoparticles are grown through the reaction of solution of different concentration of CdCl2 with H2S. X-ray diffraction pattern confirms nano nature of CdS and has been used to determine the size of particle. Optical absorption spectroscopy is used to measure the energy band gap of these nanomaterials by using Tauc relation. Energy band gap ranging between 3.12 eV to 2.47 eV have been obtained for the samples containing the nanoparticles in the range of 2.3 to 6.0 nm size. A correlation between the band gap and size of the nanoparticles is also established.

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