Ultrafast laser direct writing on PVP/FTO/Glass substrates to fabricate Ag mesh transparent conductive films

Author(s):  
Yi-lun Wang ◽  
Shuang-shuang Li ◽  
Bao-jia Li ◽  
Yao Zhang ◽  
Li-jing Huang ◽  
...  
Small ◽  
2018 ◽  
Vol 14 (44) ◽  
pp. 1803143 ◽  
Author(s):  
Yihe Huang ◽  
Lei Zeng ◽  
Chongguang Liu ◽  
Desen Zeng ◽  
Zhu Liu ◽  
...  

2014 ◽  
Vol 6 (3) ◽  
pp. 293 ◽  
Author(s):  
Martynas Beresna ◽  
Mindaugas Gecevičius ◽  
Peter G. Kazansky

2014 ◽  
Vol 430 ◽  
pp. 13-17 ◽  
Author(s):  
Hao-Yan Chen ◽  
Dongdong Han ◽  
Ye Tian ◽  
Ruiqiang Shao ◽  
Shu Wei

2013 ◽  
Vol 38 (23) ◽  
pp. 4950 ◽  
Author(s):  
Vitor Oliveira ◽  
Sahendra P. Sharma ◽  
Pilar Herrero ◽  
Rui Vilar

2013 ◽  
Vol 102 (20) ◽  
pp. 201108 ◽  
Author(s):  
Hong-Zhong Cao ◽  
Mei-Ling Zheng ◽  
Xian-Zi Dong ◽  
Feng Jin ◽  
Zhen-Sheng Zhao ◽  
...  

2012 ◽  
Vol 500 ◽  
pp. 226-230 ◽  
Author(s):  
Yu Zhen Yuan ◽  
Hui Wang

Zr,Ga co-doped ZnO transparent conductive films were deposited on glass substrates by DC magnetron sputtering at room temperature.The influence of sputtering pressure on the structural,electrical,and optical properties of Zr,Ga co-doped ZnO films was investigated by X-ray diffraction,scanning electron microscopy (SEM),digital four-point probe,and optical transmission spectroscopy.The lowest resistivity of the Zr,Ga co-doped ZnO film is 3.01×10-4Ω﹒cm.All the films present a high transmittance of above 91% in the visible range.These results make the possibility for liquid crystal display (LCD) and UV photoconductive detectors.


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