Co-Doped ZnO Transparent Conductive Films for LCD and UV Detectors

2012 ◽  
Vol 500 ◽  
pp. 226-230 ◽  
Author(s):  
Yu Zhen Yuan ◽  
Hui Wang
Keyword(s):  
Liquid Crystal Display ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Uv Detectors ◽  
Transparent Conductive Films ◽  
Glass Substrates ◽  
Conductive Films ◽  
Photoconductive Detectors ◽  
Doped Zno ◽  
Co Doped

Zr,Ga co-doped ZnO transparent conductive films were deposited on glass substrates by DC magnetron sputtering at room temperature.The influence of sputtering pressure on the structural,electrical,and optical properties of Zr,Ga co-doped ZnO films was investigated by X-ray diffraction,scanning electron microscopy (SEM),digital four-point probe,and optical transmission spectroscopy.The lowest resistivity of the Zr,Ga co-doped ZnO film is 3.01×10-4Ω﹒cm.All the films present a high transmittance of above 91% in the visible range.These results make the possibility for liquid crystal display (LCD) and UV photoconductive detectors.

The Effect of Sputtering Power on the Properties of Zr-Ga Co-Doped ZnO Films by DC Magnetron Sputtering

2013 ◽  
Vol 680 ◽  
pp. 75-80
Author(s):  
Xiao Li Wu ◽  
Hui Wang ◽  
Yu Zhen Yuan
Keyword(s):  
Magnetron Sputtering ◽  
Visible Range ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Conductive Films ◽  
Sputtering Power ◽  
Doped Zno ◽  
Co Doped

Zr-Ga co-doped ZnO transparent conductive films were prepared on glass substrates by DC magnetron sputtering at room temperature. The influence of sputtering power on the structural, electrical and optical properties of Zr-Ga co-doped ZnO films was investgated by X-ray diffraction, scanning electron microscopy (SEM), digital four-point probe and optical transmission spectroscopy. The lowest resistivity of the Zr-Ga co-doped ZnO films is 3.02×10-4Ω﹒cm and the average transmittance of the films is over 90% in the visible range. The obtained optical band gap of these films is much larger than of pure ZnO (3.34 eV).

Effect of N and P codoping on ZnO properties

2013 ◽  
Vol 645 ◽  
pp. 64-67 ◽  
Author(s):  
Jin Zhong Wang ◽  
Elangovan Elamurugu ◽  
Hong Tao Li ◽  
Shu Jie Jiao ◽  
Lian Cheng Zhao ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atomic Ratio ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Nitrogen And Phosphorus ◽  
X Ray ◽  
Co Doping ◽  
Glass Substrates ◽  
Doped Zno ◽  
Co Doped

Nitrogen and Phosphorus co-doped (N+P)- zinc oxide (ZnO) films were RF sputtered on corning glass substrates at 350 °C and comparatively studied with undoped, N-, and P- doped ZnO. X-ray diffraction spectra confirmed that the ZnO structure with a preferred orientation along direction. Scanning electron microscope analysis showed different microstructure for the N+P co-doping, and thus probably confirming the co-existence of both the dopants. X-ray photoelectron spectroscopy spectra revealed that the chemical composition in N+P co-doped ZnO are different from that found in undoped, N-, and P- doped ZnO. The atomic ratio of N and P in N+P co-doped ZnO is higher than that in single N or P doped ZnO. One broad ZnO emission peak around 420 nm is observed in photoluminescence spectra. The relative intensity of the strongest peak obtained from co-doped ZnO films is about twice than the P- doped and thrice than the pure and N- doped films.

Effects of Annealing on Properties of (Na,Mg):ZnO Thin Films Deposited by Sol-Gel Method

2014 ◽  
Vol 898 ◽  
pp. 33-36 ◽  
Author(s):  
Cai Zhen Zhang ◽  
Yong Gang Chen ◽  
Su Liu
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Coating Method ◽  
Method Effects ◽  
Structural Surface ◽  
Co Doped

Na/Mg co-doped (Na,Mg):ZnO films were fabricated on pyrex glass substrates by sol-gel spin-coating method. Effects of annealing on properties of the films were particularly investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmittance spectra. The internal stress of the films annealed at different temperature was calculated. Experimental and analytical results show that some NaCl freeze-out derivatives will appear on films when the annealing temperature is too low, with the increasing annealing temperature, the c-axis tensile stress is sharply decreased first, then the c-axis stress was changed into press stress and its value is increased continuously, so the structural, surface and the optical properties of the films improve first and deteriorate afterwards.

scholarly journals Synthesis of Ni-Doped ZnO Nanorod Arrays by Chemical Bath Deposition and Their Application to Nanogenerators

Energies ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2731 ◽  
Author(s):  
Yen-Lin Chu ◽  
Sheng-Joue Young ◽  
Liang-Wen Ji ◽  
Tung-Te Chu ◽  
Po-Hao Chen
Keyword(s):  
Chemical Bath Deposition ◽  
Indium Tin Oxide ◽  
Electron Beam Evaporation ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Ito Glass ◽  
Evaporation Technique ◽  
Doped Zno ◽  
Cbd Method

Nanogenerators (NGs) based on Ni-doped ZnO (NZO) nanorod (NR) arrays were fabricated and explored in this study. The ZnO films were grown on indium tin oxide (ITO) glass substrates, and the NZO NRs were prepared by the chemical bath deposition (CBD) method. The samples were investigated via field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) spectral analysis. The results showed that the growth of NRs presented high-density single crystalline structures and were preferentially oriented in the c-axis direction. The optical characteristics of the NZO NRs were also measured by photoluminescence (PL) spectra. All samples exhibited two different emissions, including ultraviolet (UV) and green emissions. ITO etching paste was used to define patterns, and an electrode of Au film was evaporated onto the ITO glass substrates by the electron beam evaporation technique to assemble the NG device. In summary, ZnO NRs with Ni dopant (5 mM) showed significantly excellent performance in NGs. The optimal measured voltage, current, and power for the fabricated NGs were 0.07 V, 10.5 µA, and 735 nW, respectively.

EFFECTS OF SUBSTRATE TEMPERATURE ON THE DOPING CHARACTERISTICS OF Li-W CO-DOPED ZnO FILMS

2014 ◽  
Vol 21 (01) ◽  
pp. 1450003 ◽  
Author(s):  
YUEHUI HU ◽  
YICHUAN CHEN ◽  
XIAOHUA ZHANG ◽  
DEFU MA ◽  
JUNXIANG WANG ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Film Surface ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Zno Films ◽  
Glass Substrates ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Co Doped

Li - W co-doped ZnO (LWZO) thin films were deposited on quartz glass substrates by RF magnetron sputtering technology. The properties of LWZO films deposited with varied substrate temperatures were investigated. When the substrate temperature was lower than 120°C — according to X-ray diffraction (XRD) patterns, films keep hexagonal wurtzite structure with the (002) plane as preferred orientation — the optical transmittance was higher than 85%. When the substrate temperature was higher than 120°C, the results of XPS and XRD show that W 6+ will work as donors, and the (101) peak appeared; the optical transmittance decreased slightly but still higher than 82%. Scanning electron microscope (SEM) and its two-dimensional Fourier transform images showed that films had smooth surface and columnar particles structure when the substrate temperature was lower than 120°C. The film surface became rougher and flaky-shaped particles structure could be observed when the substrate temperature was higher than 120°C. In addition, the lowest electrical resistivity of sample was 3.6 × 10-3 Ω ⋅ cm which was obtained at substrate temperature 240°C.

Positron Beam Study of Co Doped ZnO Films Prepared by PLD

2008 ◽  
Vol 607 ◽  
pp. 102-104 ◽  
Author(s):  
Hong Feng Ren ◽  
Hui Min Weng ◽  
Bang Jiao Ye ◽  
Rong Dian Han ◽  
Hui Li ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Effective Diffusion ◽  
Positron Beam ◽  
Zno Films ◽  
Defect Structures ◽  
X Ray Diffraction ◽  
Slow Positron ◽  
X Ray ◽  
Doped Zno ◽  
Co Doped

Slow positron beam are used to study defect structures in Co doped and undoped ZnO films prepared by Pulsed Laser Deposition (PLD) at 400°C, 600°C, 700°C on c-plane sapphire. Comparing with ZnO samples, Co doped ZnO samples have larger positron effective diffusion length (Leff), which change in different tendencies depending on the growth temperature. Crystal structures of the samples are investigated by X-ray diffraction (XRD) and wurtzite ZnO could be observed in Co doped samples.

Sign in / Sign up

Export Citation Format

Share Document