Microstructure and ferroelectric properties of Ta-doped Bi3.25La0.75Ti3O12/ZnO thin film capacitors

Author(s):  
Shuai Ma ◽  
Wei Li ◽  
Jigong Hao ◽  
Shiqiang Ren ◽  
Min Wang ◽  
...  
1997 ◽  
Vol 310 (1-2) ◽  
pp. 327-331 ◽  
Author(s):  
Eun Gu Lee ◽  
Jin Seong Park ◽  
Jong Kook Lee ◽  
Jae Gab Lee

2006 ◽  
Vol 153 (6) ◽  
pp. F115 ◽  
Author(s):  
Chun-Kai Huang ◽  
Yan-Kai Chiou ◽  
Yan-Chang Chu ◽  
Tai-Bor Wu ◽  
Cho-Jen Tsai

2005 ◽  
Vol 328 (1) ◽  
pp. 121-125
Author(s):  
Jaemoon Pak ◽  
Kuangwoo Nam ◽  
Jungsuk Lee ◽  
Gwangseo Park

2002 ◽  
Vol 17 (7) ◽  
pp. 1735-1742 ◽  
Author(s):  
Seung-Hyun Kim ◽  
Dong-Yeon Park ◽  
Hyun-Jung Woo ◽  
Dong-Soo Lee ◽  
Jowoong Ha ◽  
...  

The effects of IrO2/Pt layered hybrid bottom and/or top electrode structures on the leakage current density versus voltage (J–V), polarization versus voltage (P–V), ferroelectric imprint, and fatigue properties of chemical-solution-derived Pb(ZrxTi1−x)O3 (PZT, Zr/Ti = 35/65) thin films were investigated. The best P–V and J–V performances were obtained from a capacitor with nonhybrid electrodes (Pt/PZT/Pt capacitor). However, the poor fatigue performance of the capacitor required the adoption of hybrid electrode structures. A thin IrO2 layer, as thin as 6 nm, which was inserted between top Pt electrode and PZT layer was sufficient for improving the fatigue performance without any degradation of the other ferroelectric properties. However, the same layer adopted on the bottom Pt electrode was not effective in improving the fatigue performance with degradation in P–V and J–V properties. This was ascribed to IrO2 layer dissolution into the PZT layer during the crystallization annealing of the PZT thin film. A thicker IrO2 layer resulted in more serious degradation.


2001 ◽  
Vol 33 (1-4) ◽  
pp. 281-290 ◽  
Author(s):  
Kazuhide Abe ◽  
Naoko Yanase ◽  
Takaaki Yasumoto ◽  
Ryoichi Ohara ◽  
Kenya Sano ◽  
...  

1994 ◽  
Vol 361 ◽  
Author(s):  
Ilsub Chung ◽  
J.K. Lee ◽  
Wan In Lee ◽  
C.W. Chung

ABSTRACTThe ferroelectric properties of PZT on RuO2 electrodes were compared to those on RuOStudy on Multilayered Electrodes for Ferroelectric Thin Film Capacitors. It seems that the microstructure of PZT film plays an important role in the improvement of electrical properties. In particular, the change in the grain size of PZT film is responsible for the enhancement of the electrical properties. It was found in this study that films with smaller grain size had larger coercive fields. The exact dependence of the grain size on the hysteretic property is not fully understood at present. However, it is believed that the grain size affects both domain formation and domain pinning because of the influence of grain boundaries. The change in physical properties of PZT films due to the bottom electrode is understood in terms of interfacial modifications. Here we report on a method to modify physical properties of PZT films utilizing interfacial engineering.


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