Study on Multilayered Electrodes for Ferroelectric Thin Film Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
Ilsub Chung ◽  
J.K. Lee ◽  
Wan In Lee ◽  
C.W. Chung
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Electrical Properties ◽  
Physical Properties ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Film ◽  
Interfacial Engineering ◽  
Pzt Film ◽  
Thin Film Capacitors ◽  
Pzt Films

ABSTRACTThe ferroelectric properties of PZT on RuO2 electrodes were compared to those on RuOStudy on Multilayered Electrodes for Ferroelectric Thin Film Capacitors. It seems that the microstructure of PZT film plays an important role in the improvement of electrical properties. In particular, the change in the grain size of PZT film is responsible for the enhancement of the electrical properties. It was found in this study that films with smaller grain size had larger coercive fields. The exact dependence of the grain size on the hysteretic property is not fully understood at present. However, it is believed that the grain size affects both domain formation and domain pinning because of the influence of grain boundaries. The change in physical properties of PZT films due to the bottom electrode is understood in terms of interfacial modifications. Here we report on a method to modify physical properties of PZT films utilizing interfacial engineering.

scholarly journals Effects of LaNiO3 Seed Layer on the Microstructure and Electrical Properties of Ferroelectric BZT/PZT/BZT Thin Films

2021 ◽  
Vol 8 ◽  
Author(s):  
Jinyu Ruan ◽  
Chao Yin ◽  
Tiandong Zhang ◽  
Hao Pan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Electrical Properties ◽  
Seed Layer ◽  
Ferroelectric Properties ◽  
Lower Surface ◽  
Multilayer Films ◽  
Multilayer Thin Films ◽  
Orientation Growth

Ferroelectric multilayer films attract great attention for a wide variation of applications. The synergistic effect by combining different functional layers induces distinctive electrical properties. In this study, ferroelectric BaZr0.2Ti0.8O3/PbZr0.52Ti0.48O3/BaZr0.2Ti0.8O3 (BZT/PZT/BZT) multilayer thin films are designed and fabricated by using the magnetron sputtering method, and a LaNiO3 (LNO) seed layer is introduced. The microstructures and electrical properties of the BZT/PZT/BZT films with and without the LNO seed layer are systematically studied. The results show that the BZT/PZT/BZT/LNO thin film exhibits much lower surface roughness and a preferred (100)-orientation growth, with the growth template and tensile stress provided by the LNO layer. Moreover, an enhanced dielectric constant, decreased dielectric loss, and improved ferroelectric properties are achieved in BZT/PZT/BZT/LNO thin films. This work reveals that the seed layer can play an important role in improving the microstructure and properties of ferroelectric multilayer films.

scholarly journals Synchrotron X-ray Microdiffraction Images of Polarization Switching in Epitaxial PZT Capacitors with Pt and SrRuO3 Top Electrodes

2003 ◽  
Vol 784 ◽  
Author(s):  
Dal-Hyun Do ◽  
Dong Min Kim ◽  
Chang-Beom Eom ◽  
Eric M. Dufresne ◽  
Eric D. Isaacs ◽  
...  
Keyword(s):  
Thin Film ◽  
Bottom Electrode ◽  
Sputter Deposition ◽  
Ferroelectric Polarization ◽  
X Rays ◽  
X Ray ◽  
Pzt Film ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Switchable Polarization

ABSTRACTThe evolution of stored ferroelectric polarization in PZT thin film capacitors was imaged using synchrotron x-ray microdiffraction with a submicron-diameter focused incident x-ray beam. To form the capacitors, an epitaxial Pb(Zr,Ti)O3 (PZT) thin film was deposited on an epitaxially-grown conductive SrRuO3 (SRO) bottom electrode on a SrTiO3 (STO) (001) substrate. Polycrystalline SRO or Pt top electrodes were prepared by sputter deposition through a shadow mask and subsequent annealing. The intensity of x-ray reflections from the PZT film depended on the local ferroelectric polarization. With 10 keV x-rays, regions of opposite polarization differed in intensity by 26% in our PZT capacitor with an SRO top electrode. Devices with SRO electrodes showed just a 25% decrease in the remnant polarization after 107 switching cycles. In devices with Pt top electrodes, however, the switchable polarization decreased a by 70% after only 5×104 cycles.

Electrical Properties of Lead Lanthanum Titanate Thin-Film Capacitors Prepared by Sol-Gel Method

1995 ◽  
Vol 34 (Part 1, No. 11) ◽  
pp. 6133-6138 ◽  
Author(s):  
Su Jae Lee ◽  
Min Su Jang ◽  
Chae Ryong Cho ◽  
Kwang Yong Kang ◽  
SeokKilHan
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Thin Film Capacitors ◽  
Lanthanum Titanate ◽  
Titanate Thin Film

Polarity Effect and Dielectric Breakdown of Composite Ferroelectric Films as the Dielectric for Electrowetting Systems

2018 ◽  
Vol 281 ◽  
pp. 598-603 ◽  
Author(s):  
Wei Qiang Wang ◽  
Yan Su
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Breakdown Voltage ◽  
Dielectric Breakdown ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Film ◽  
Ferroelectric Films ◽  
Dc Voltage ◽  
Voltage Polarity ◽  
Voltage Frequency

In this paper, we study the electrical properties and breakdown phenomena of BaTiO3/Teflon composite ferroelectric thin film in electrowetting systems. The experimental results showed that the electrowetting effect and the breakdown voltage depend on DC voltage polarity, and this polarity dependence is closely related to the thickness of the ferroelectric film. Under AC voltages, the breakdown voltage increased directly with voltage frequency. These results are useful for designing reliable EWOD devices with low operation voltages and high robustness.

BiFeO3-doped (K0.5,Na0.5)(Mn0.005,Nb0.995)O3 ferroelectric thin film capacitors for high energy density storage applications

2017 ◽  
Vol 110 (15) ◽  
pp. 152901 ◽  
Author(s):  
Sung Sik Won ◽  
Masami Kawahara ◽  
Lindsay Kuhn ◽  
Vineeth Venugopal ◽  
Jiyeon Kwak ◽  
...  
Keyword(s):  
Thin Film ◽  
Energy Density ◽  
Ferroelectric Thin Film ◽  
High Energy ◽  
High Energy Density ◽  
Thin Film Capacitors
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