Etching resistance and etching behavior of h-BN textured ceramics under Xe plasma condition

2021 ◽  
Author(s):  
Zhuo Tian ◽  
Baofu Qiu ◽  
Jiao Qu ◽  
Heng Chen ◽  
Juan Wang
Keyword(s):  
Plasma Condition ◽  
Textured Ceramics ◽  
Etching Behavior

Wet Etching Behavior of Poly-Si in TMAH Solution

2012 ◽  
Vol 195 ◽  
pp. 42-45 ◽  
Author(s):  
Hiroaki Takahashi ◽  
Masayuki Otsuji ◽  
Jim Snow ◽  
Farid Sebaai ◽  
Kenichiro Arai ◽  
...  
Keyword(s):  
Wet Etching ◽  
Tetramethylammonium Hydroxide ◽  
Process Performance ◽  
Etching Behavior ◽  
Dummy Gate ◽  
Tmah Solution

Since Tetramethylammonium Hydroxide (TMAH) became widely used as a silicon etchant, e.g. the dummy gate removal for gate-last approach (RMG) [1, or Si fin formation on FinFET [, some careful preparations and optimizations have required implementation. These adaptations have involved not only chemical-related issues, but also hardware-related in order to satisfy the necessary process performance.

Silicon inclusion effect on fullerene formation under induction thermal plasma condition

2002 ◽  
Vol 407 (1-2) ◽  
pp. 72-78 ◽  
Author(s):  
C. Wang ◽  
T. Imahori ◽  
Y. Tanaka ◽  
T. Sakuta ◽  
H. Takikawa ◽  
...  
Keyword(s):  
Thermal Plasma ◽  
Plasma Condition ◽  
Induction Thermal Plasma ◽  
Fullerene Formation

Passivation role of sulfur and etching behavior in plasma etched TiW using SF6 and BCl3 gases

1997 ◽  
Vol 33 (1-4) ◽  
pp. 223-229 ◽  
Author(s):  
Il-Sup Jin ◽  
Hyung-Ho Park ◽  
Kwang-Ho Kwon ◽  
Chang-Il Kim
Keyword(s):  
Etching Behavior

Effect of rare-earth elements on the plasma etching behavior of the RE–Si–Al–O glasses

2012 ◽  
Vol 358 (5) ◽  
pp. 898-902 ◽  
Author(s):  
Jungki Lee ◽  
Dongsun Kim ◽  
Sungmin Lee ◽  
Hyungsun Kim
Keyword(s):  
Rare Earth ◽  
Rare Earth Elements ◽  
Plasma Etching ◽  
Etching Behavior
Sign in / Sign up

Export Citation Format

Share Document