Wet Etching Behavior of Poly-Si in TMAH Solution

2012 ◽  
Vol 195 ◽  
pp. 42-45 ◽  
Author(s):  
Hiroaki Takahashi ◽  
Masayuki Otsuji ◽  
Jim Snow ◽  
Farid Sebaai ◽  
Kenichiro Arai ◽  
...  
Keyword(s):  
Wet Etching ◽  
Tetramethylammonium Hydroxide ◽  
Process Performance ◽  
Etching Behavior ◽  
Dummy Gate ◽  
Tmah Solution

Since Tetramethylammonium Hydroxide (TMAH) became widely used as a silicon etchant, e.g. the dummy gate removal for gate-last approach (RMG) [1, or Si fin formation on FinFET [, some careful preparations and optimizations have required implementation. These adaptations have involved not only chemical-related issues, but also hardware-related in order to satisfy the necessary process performance.

Study of Oxygen Concentration in TMAH Solution for Improvement of Sigma-Shaped Wet Etching Process

2016 ◽  
Vol 255 ◽  
pp. 18-21
Author(s):  
Yong Gen He ◽  
Huan Xin Liu ◽  
Jia Lei Liu ◽  
Jin Gang Wu ◽  
Christian Haigermoser ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Wet Etching ◽  
Tetramethylammonium Hydroxide ◽  
Etching Process ◽  
Shape Formation ◽  
Ic Manufacturing ◽  
The Impact ◽  
Tmah Solution

Tetramethylammonium hydroxide (TMAH) is a common etchant for Sigma shape formation in IC manufacturing. The impact of oxygen dissolved in TMAH solution on process was studied in this paper. A novel O2 gas injector was developed to improve the process stabilization by control of the oxygen concentration in TMAH solution

Reaction Kinetics of Poly-Si Etching in TMAH Solution

2021 ◽  
Vol 314 ◽  
pp. 60-65
Author(s):  
Taegun Park ◽  
Sangwoo Lim
Keyword(s):  
Reaction Kinetics ◽  
Alkaline Solution ◽  
Etching Rate ◽  
Tetramethylammonium Hydroxide ◽  
Dissolved Gas ◽  
Metal Free ◽  
Effect Of Water ◽  
Detailed Kinetics ◽  
Kinetics Of ◽  
Tmah Solution

Tetramethylammonium hydroxide (TMAH) is a metal-free strong alkaline solution which can etch poly-Si. The concentration of dissolved gas as well as the concentration of TMAH affects etching rate of poly-Si. The detailed kinetics of poly-Si etching in TMAH solution is investigated in this study. The effect of water and TMAH concentration on the etching kinetics of poly-Si was investigated by using various concentrations of TMAH solution. It is found that H2O in TMAH solution plays an important role in etching poly-Si. Presence of dissolved CO2 and O2 in TMAH solution tends to inhibit etching of poly-Si. The concentration of dissolved CO2 and O2 in TMAH were reduced by Ar bubbling, thereby the poly-Si etching rate increased.

The dependence of AlN molar fraction of AlGaN in wet etching by using tetramethylammonium hydroxide aqueous solution

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCC30 ◽  
Author(s):  
Shinji Yasue ◽  
Kosuke Sato ◽  
Yuta Kawase ◽  
Junya Ikeda ◽  
Yusuke Sakuragi ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Molar Fraction ◽  
Wet Etching ◽  
Tetramethylammonium Hydroxide

Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region

2014 ◽  
Vol 219 ◽  
pp. 115-118 ◽  
Author(s):  
Atsushi Okuyama ◽  
Suguru Saito ◽  
Yoshiya Hagimoto ◽  
Kenji Nishi ◽  
Ayuta Suzuki ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Wet Etching ◽  
Experimental Results ◽  
Etching Process ◽  
Process Conditions ◽  
Liquid Interfaces ◽  
Electrostatic Effects ◽  
Etching Behavior ◽  
Solid Liquid

The microminiaturization of semiconductor devices has made it necessary to control the wet etching process on the nanometer order. It is therefore extremely important to understand wet etching reactions in the nanoscale region of solid-liquid interfaces, in order to assist in optimizing process conditions to satisfy the severe demand for semiconductor devices. Simulations performed to analyze the behavior of liquid molecules in the nanoscale region have been reported [1], but there have been few reports of detailed experimental results. We here report detailed experimental results on the wet etching behavior of SiO2 film in the nanoscale region between Si materials.

A Novel Maskless Post-CMOS Bulk Micromachining Process

2003 ◽  
Author(s):  
Jing-Hung Chiou ◽  
Ching-Liang Dai ◽  
Jen-Yi Chen ◽  
Michael S.-C. Lu
Keyword(s):  
Metal Oxide ◽  
Silicon Substrate ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Wet Etching ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Deep Cavity ◽  
Deep Cavities ◽  
Tmah Solution

This work describes a new post-CMOS (Complementary Metal Oxide Semiconductor) bulk micromachining process for fabrication of various microstructures. The important feature of the post-CMOS process is the use of wet etching without an addition mask, to form various microstructures and deep cavities in the silicon substrate. The post-CMOS process starts with wet etching to remove sacrificial layers, which are stacked layers of metals and vias, to expose the silicon substrate. Then, KOH or TMAH solution is employed to etch the silicon substrate to form various deep cavities and suspended structures. Many suspended structures, which include beams, bridges and plates, are fabricated using the standard 0.35-μm SPFM (Single Polysilicon Four Metal) CMOS process and the post-CMOS process. Experimental results reveals that a plate with an area of 200×200 μm2, a bridge with a length of 300μm, and various beams with lengths from 100-μm to 400-μm suspended on a deep cavity were fabricated successfully.

Selective wet etching in fabricating SiGe nanowires with TMAH solution for gate-all-around MOSFETs

2020 ◽  
Vol 31 (24) ◽  
pp. 22478-22486
Author(s):  
Xiaohong Cheng ◽  
Yongliang Li ◽  
Haoyan Liu ◽  
Ying Zan ◽  
Yihong Lu ◽  
...  
Keyword(s):  
Wet Etching ◽  
Tmah Solution
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