Monte Carlo simulation of the aggregation of rod–flexible triblock copolymers in a thin film

2006 ◽  
Vol 321 (1-2) ◽  
pp. 1-9 ◽  
Author(s):  
Jie Cui ◽  
Jintao Zhu ◽  
Zengwei Ma ◽  
Wei Jiang
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.


2008 ◽  
Author(s):  
Natsuko Nakagawa ◽  
Kaoru Ohno ◽  
Michio Tokuyama ◽  
Irwin Oppenheim ◽  
Hideya Nishiyama

2007 ◽  
Vol 9 (5) ◽  
pp. 550-555 ◽  
Author(s):  
Liu Zuli ◽  
Shi Yanli ◽  
Jing Xingbin ◽  
Yu Li ◽  
Yao Kailun

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