Charge carrier transport in high purity perylene single crystal studied by time-of-flight measurements and through field effect transistor characteristics

2006 ◽  
Vol 325 (1) ◽  
pp. 160-169 ◽  
Author(s):  
Masahiro Kotani ◽  
Koji Kakinuma ◽  
Masafumi Yoshimura ◽  
Kouta Ishii ◽  
Saori Yamazaki ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Single Crystal ◽  
High Purity ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistor ◽  
Time Of Flight ◽  
Charge Carrier Transport ◽  
Effect Transistor ◽  
Flight Measurements

Anisotropy of charge carrier transport in PCPDTBT field-effect transistor structures

2020 ◽  
Vol 264 ◽  
pp. 116382
Author(s):  
Andrius Aukštuolis ◽  
Nerijus Nekrašas ◽  
Kristijonas Genevičius ◽  
Jūratė Jonikaitė-Švėgždienė
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistor ◽  
Charge Carrier Transport ◽  
Effect Transistor

The device level modulation of carrier transport in a 2D WSe2 field effect transistor via a plasma treatment

Nanoscale ◽  
2019 ◽  
Vol 11 (37) ◽  
pp. 17368-17375 ◽  
Author(s):  
Inyong Moon ◽  
Sungwon Lee ◽  
Myeongjin Lee ◽  
Changsik Kim ◽  
Daehee Seol ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Work Function ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistor ◽  
Plasma Channel ◽  
Thermal Limit ◽  
Channel Resistance ◽  
Effect Transistor

WSe2 FET oxidized by plasma. Channel resistance decreases exponentially with increasing WSe2 work function, approaching thermal limit.

An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (11) ◽  
pp. 2370-2373 ◽  
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Active Materials ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

scholarly journals Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

2010 ◽  
Vol 107 (2) ◽  
pp. 024101 ◽  
Author(s):  
Meiyong Liao ◽  
Yasuhito Gotoh ◽  
Hiroshi Tsuji ◽  
Kiyomi Nakajima ◽  
Masataka Imura ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Crystal Diamond ◽  
Effect Transistor
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