The device level modulation of carrier transport in a 2D WSe2 field effect transistor via a plasma treatment

Nanoscale ◽  
2019 ◽  
Vol 11 (37) ◽  
pp. 17368-17375 ◽  
Author(s):  
Inyong Moon ◽  
Sungwon Lee ◽  
Myeongjin Lee ◽  
Changsik Kim ◽  
Daehee Seol ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Work Function ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistor ◽  
Plasma Channel ◽  
Thermal Limit ◽  
Channel Resistance ◽  
Effect Transistor

WSe2 FET oxidized by plasma. Channel resistance decreases exponentially with increasing WSe2 work function, approaching thermal limit.

scholarly journals A highly selective electron affinity facilitated H2S sensor: the marriage of tris(keto-hydrazone) and an organic field-effect transistor

2021 ◽  
Author(s):  
Saravanan Yuvaraja ◽  
Veerabhadraswamy Nagarajappa Bhyranalyar ◽  
Sachin Ashok Bhat ◽  
Sandeep Goud Surya ◽  
Channabasaveshwar Veerappa Yelamaggad ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Electron Affinity ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Preventive Measures ◽  
Organic Field Effect Transistor ◽  
Toxic Gases ◽  
Channel Resistance ◽  
Effect Transistor

The proposed H2S gas sensor is a novel heterojunction combination that can readily absorb toxic gases, changing the channel resistance of the device. The OFET device is a highly stable and selective tool that can help in taking preventive measures.

Design of Bulk Fin-Type Field-Effect Transistor Considering Gate Work-Function

2008 ◽  
Vol 47 (6) ◽  
pp. 4385-4391 ◽  
Author(s):  
Kyoung-Rok Han ◽  
Byung-Kil Choi ◽  
Hyuck-In Kwon ◽  
Jong-Ho Lee
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Gate Work Function
Sign in / Sign up

Export Citation Format

Share Document