First-principles based analysis of the piezoelectric response in α-LiIO3

2017 ◽  
Vol 138 ◽  
pp. 199-203 ◽  
Author(s):  
P. Hermet
2014 ◽  
Vol 63 (12) ◽  
pp. 126301
Author(s):  
Wang Jiang-Duo ◽  
Dai Jian-Qing ◽  
Song Yu-Min ◽  
Zhang Hu ◽  
Niu Zhi-Hui

Nanoscale ◽  
2020 ◽  
Vol 12 (41) ◽  
pp. 21291-21298
Author(s):  
Lei Zhang ◽  
Cheng Tang ◽  
Chunmei Zhang ◽  
Aijun Du

Three novel ferroelectric MXene phases with out-of-plane and in-plane ferroelectricity, piezoelectricity, and auxeticity are highlighted that can be achieved by surface functionalization.


2015 ◽  
Vol 92 (17) ◽  
Author(s):  
C. Tholander ◽  
F. Tasnádi ◽  
I. A. Abrikosov ◽  
L. Hultman ◽  
J. Birch ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 309
Author(s):  
Kenji Hirata ◽  
Yuto Mori ◽  
Hiroshi Yamada ◽  
Masato Uehara ◽  
Sri Ayu Anggraini ◽  
...  

This study employs first-principles calculations to investigate how introducing Yb into aluminum nitride (AlN) leads to a large enhancement in the material’s piezoelectric response (d33). The maximum d33 is calculated to be over 100 pC/N, which is 20 times higher than that of AlN. One reason for such a significant improvement in d33 is the elastic-softening effect, which is indicated by a decrease in the elastic constant, C33. The strain sensitivity (du/dε) of the internal parameter, u, is also an important factor for improving the piezoelectric stress constant, e33. On the basis of mixing enthalpy calculations, YbxAl1−xN is predicted to be more stable as a wurtzite phase than as a rock salt phase at composition up to x ≈ 0.7. These results suggest that Yb can be doped into AlN at high concentrations. It was also observed that the dielectric constant, ε33, generally increases with increasing Yb concentrations. However, the electromechanical coupling coefficient, k332, only increases up to x = 0.778, which is likely because of the relatively lower values of ε33 within this range.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Sangita Dutta ◽  
Pratyush Buragohain ◽  
Sebastjan Glinsek ◽  
Claudia Richter ◽  
Hugo Aramberri ◽  
...  

AbstractBecause of its compatibility with semiconductor-based technologies, hafnia (HfO2) is today’s most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO2 has recently been predicted to display a negative longitudinal piezoelectric effect, which sets it apart from classic ferroelectrics (e.g., perovskite oxides like PbTiO3) and is reminiscent of the behavior of some organic compounds. The present work corroborates this behavior, by first-principles calculations and an experimental investigation of HfO2 thin films using piezoresponse force microscopy. Further, the simulations show how the chemical coordination of the active oxygen atoms is responsible for the negative longitudinal piezoelectric effect. Building on these insights, it is predicted that, by controlling the environment of such active oxygens (e.g., by means of an epitaxial strain), it is possible to change the sign of the piezoelectric response of the material.


2018 ◽  
Vol 6 (28) ◽  
pp. 7671-7676 ◽  
Author(s):  
Gang Tang ◽  
Jiawang Hong

By inserting C7H7+ cations into 1D GAPbI3, the band gap is directly narrowed from 2.28 to 0.69 eV. In addition, a large piezoelectric response is also predicted in 1D GAPbI3.


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