Application of self-consistent rate equations approach for SiC (0001) surface epitaxial growth

2021 ◽  
Vol 188 ◽  
pp. 110253
Author(s):  
Wensen Ai ◽  
Xuejiang Chen ◽  
Yuan Li ◽  
Hao Zhao
Keyword(s):  
Epitaxial Growth ◽  
Rate Equations ◽  
Self Consistent

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Reaction ◽  
Quantitative Description ◽  
The Other ◽  
Rate Equations ◽  
Impact Interaction ◽  
Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

Kinetic theory of protein filament growth: Self-consistent methods and perturbative techniques

2014 ◽  
Vol 29 (02) ◽  
pp. 1530002 ◽  
Author(s):  
Thomas C. T. Michaels ◽  
Tuomas P. J. Knowles
Keyword(s):  
Self Assembly ◽  
Protein Structures ◽  
Filamentous Growth ◽  
Molecular Structures ◽  
The Self ◽  
Rate Equations ◽  
Disease States ◽  
Self Consistent ◽  
Monomeric Proteins ◽  
General Physical

Filamentous protein structures are of high relevance for the normal functioning of the cell, where they provide the structural component for the cytoskeleton, but are also implicated in the pathogenesis of many disease states. The self-assembly of these supra-molecular structures from monomeric proteins has been studied extensively in the past 50 years and much interest has focused on elucidating the microscopic events that drive linear growth phenomena in a biological setting. Master equations have proven to be particularly fruitful in this context, allowing specific assembly mechanisms to be linked directly to experimental observations of filamentous growth. Recently, these approaches have increasingly been applied to aberrant protein polymerization, elucidating potential implications for controlling or combating the formation of pathological filamentous structures. This article reviews recent theoretical advances in the field of filamentous growth phenomena through the use of the master-equation formalism. We use perturbation and self-consistent methods for obtaining analytical solutions to the rate equations describing fibrillar growth and show how the resulting closed-form expressions can be used to shed light on the general physical laws underlying this complex phenomenon. We also present a connection between the underlying ideas of the self-consistent analysis of filamentous growth and the perturbative renormalization group.

Opto-electronic Simulation of GaN Nanowire Lasers

2005 ◽  
Vol 892 ◽  
Author(s):  
Liang Chen ◽  
Elias Towe
Keyword(s):  
Carrier Transport ◽  
Optical Gain ◽  
Stimulated Emission ◽  
Rate Equations ◽  
Electronic Simulation ◽  
Self Consistent ◽  
Optical Modes ◽  
Gan Nanowire ◽  
Nanowire Lasers ◽  
Lasing Modes

AbstractA self-consistent, coupled opto-electronic simulation for studying GaN nanowire lasers is presented. The model solves, simultaneously and self-consistently, the carrier transport equations and the photon rate equations. The basic physical model takes into account both bulk and surface dark recombinations, stimulated emission, the anisotropic optical gain typical of the Wurtzite GaN structure, the modified spontaneous emission, and its coupling into the lasing modes by microcavity effects. The model further incorporates band gap shrinkage effects due to band renormalization and the effects of multiple lateral and longitudinal lasing and non-lasing optical modes.

Capture numbers in rate equations and scaling laws for epitaxial growth

2003 ◽  
Vol 67 (15) ◽  
Author(s):  
Frédéric Gibou ◽  
Christian Ratsch ◽  
Russel Caflisch
Keyword(s):  
Epitaxial Growth ◽  
Scaling Laws ◽  
Rate Equations

Rate equations model for layer epitaxial growth kinetics

2003 ◽  
Vol 428 (1-2) ◽  
pp. 66-71 ◽  
Author(s):  
Vladimir I. Trofimov ◽  
Vladimir G. Mokerov
Keyword(s):  
Epitaxial Growth ◽  
Growth Kinetics ◽  
Rate Equations
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