Ni–Si–C composites with various microstructures via solid state reaction of nickel and silicon carbide particulate

2008 ◽  
Vol 68 (2) ◽  
pp. 566-571 ◽  
Author(s):  
Fei Gao ◽  
Jinjun Lu ◽  
Weimin Liu
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Solid State Reaction ◽  
Silicon Carbide Particulate

Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 33-37
Author(s):  
Arthur Vo-Ha ◽  
Mickaël Rebaud ◽  
Mihai Lazar ◽  
Alexandre Tallaire ◽  
Véronique Soulière ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Solid State Reaction ◽  
Silicon Layer ◽  
Diamond Surface ◽  
Heteroepitaxial Growth ◽  
Experimental Parameters ◽  
Vls Growth

This work deals with the selective heteroepitaxial growth of silicon carbide on (100) diamond substrates using the Vapour-Liquid-Solid (VLS) transport. The morphology, the structure and doping were determined using various characterization techniques. In order to achieve succesful heteroepitaxy, the diamond surface was silicided by solid-state reaction between a silicon layer and the substrate at 1350 °C. This allowed forming a SiC buffer layer on which p-doped 3C-SiC(100) islands elongated in the <110> directions were obtained after VLS growth. The influence of the experimental parameters on the epitaxial growth is discussed.

A study of the solid state reaction between silicon carbide and iron

2002 ◽  
Vol 74 (3) ◽  
pp. 258-264 ◽  
Author(s):  
W.M. Tang ◽  
Z.X. Zheng ◽  
H.F. Ding ◽  
Z.H. Jin
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Solid State Reaction

Solid-State Reaction between Manganese Thin Films and Silicon carbide

1985 ◽  
Vol 24 (Part 1, No. 8) ◽  
pp. 940-943 ◽  
Author(s):  
Yoshiaki Okajima ◽  
Kunio Miyazaki
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Solid State ◽  
Solid State Reaction

The wustite-spinel interface

1987 ◽  
Vol 45 ◽  
pp. 268-269
Author(s):  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Strain Energy ◽  
Matrix Material ◽  
Lattice Misfit ◽  
Solid State Reactions ◽  
Oxygen Sublattice ◽  
Large Particles ◽  
Small Lattice ◽  
Coherent Interfaces

The wustite-spinel interface can be viewed as a model interface because the wustite and spinel can share a common f.c.c. oxygen sublattice such that only the cations distribution changes on crossing the interface. In this study, the interface has been formed by a solid state reaction involving either external or internal oxidation. In systems with very small lattice misfit, very large particles (>lμm) with coherent interfaces have been observed. Previously, the wustite-spinel interface had been observed to facet on {111} planes for MgFe2C4 and along {100} planes for MgAl2C4 and MgCr2O4, the spinel then grows preferentially in the <001> direction. Reasons for these experimental observations have been discussed by Henriksen and Kingery by considering the strain energy. The point-defect chemistry of such solid state reactions has been examined by Schmalzried. Although MgO has been the principal matrix material examined, others such as NiO have also been studied.

Observation of solid-state reaction between a thin yttria film and a (0001) α-alumina substrate

1994 ◽  
Vol 52 ◽  
pp. 644-645
Author(s):  
J. R. Heffelfinger ◽  
C. B. Carter
Keyword(s):  
Electron Microscopy ◽  
Solid State ◽  
Solid State Reaction ◽  
Yttrium Aluminum Garnet ◽  
Secondary Phase ◽  
Ceramic Composites ◽  
Alumina Substrate ◽  
Transmission Electron ◽  
Alumina Fibers ◽  
Optical Applications

Transmission-electron microscopy (TEM), scanning-electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) were used to investigate the solid-state reaction between a thin yttria film and a (0001) α-alumina substrate. Systems containing Y2O3 (yttria) and Al2O3 (alumina) are seen in many technologically relevant applications. For example, yttria is being explored as a coating material for alumina fibers for metal-ceramic composites. The coating serves as a diffusion barrier and protects the alumina fiber from reacting with the metal matrix. With sufficient time and temperature, yttria in contact with alumina will react to form one or a combination of phases shown by the phase diagram in Figure l. Of the reaction phases, yttrium aluminum garnet (YAG) is used as a material for lasers and other optical applications. In a different application, YAG is formed as a secondary phase in the sintering of AIN. Yttria is added to AIN as a sintering aid and acts as an oxygen getter by reacting with the alumina in AIN to form YAG.

PREDICTION OF GLASS FORMATION BY SOLID STATE REACTION IN ALLOYS

1990 ◽  
Vol 51 (C4) ◽  
pp. C4-111-C4-117 ◽  
Author(s):  
L. J. GALLEGO ◽  
J. A. SOMOZA ◽  
H. M. FERNANDEZ ◽  
J. A. ALONSO
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Glass Formation
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