scholarly journals Early stages of high-temperature oxidation of Ni- and Co-base model superalloys: A comparative study using rapid thermal annealing and advanced electron microscopy

2021 ◽  
pp. 109744
Author(s):  
Dorota Kubacka ◽  
Martin Weiser ◽  
Erdmann Spiecker
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
Comparative Study ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Temperature Oxidation ◽  
Temperature Oxidation ◽  
Early Stages

Comparative study on the high-temperature oxidation resistance of porous and solid TiNi-based alloys

2021 ◽  
Author(s):  
Ekaterina Marchenko ◽  
Gulsharat Baigonakova ◽  
Kirill Dubovikov ◽  
Yuri Yasenchuk ◽  
Timofey Chekalkin ◽  
...  
Keyword(s):  
High Temperature ◽  
Comparative Study ◽  
Oxidation Resistance ◽  
High Temperature Oxidation ◽  
Temperature Oxidation

scholarly journals Effect of Nb addition on high-temperature oxidation behavior, oxide layer structure, and its exfoliation resistance of Ti-Nb Alloys

2020 ◽  
Vol 321 ◽  
pp. 05018
Author(s):  
Eri Miura-Fujiwara ◽  
Yuya Ogawa ◽  
Mitsuo Niinomi ◽  
Tohru Yamasaki
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Oxide Layer ◽  
High Temperature Oxidation ◽  
Interfacial Microstructure ◽  
Temperature Oxidation ◽  
Transmission Electron ◽  
Cp Ti ◽  
Nb Addition

The authors proposed an oxide coating on Ti alloys for the dental abutment tooth, and they had reported that Ti–29Nb–13Ta–4.6Zr (TNTZ) alloy forms a dense oxide layer by high-temperature oxidation. On the other hand, CP Ti forms a multilayered oxide consisted of rutile monolayers and the void layer. This morphological change by alloying is supposed to be mainly caused by Nb addition in Ti since the dense oxide layer of TNTZ mainly consists of rutile TiO2 and TiNb2O7. Therefore, in this study, oxidation behaviors of various range of Nb content of Ti-xNb alloys (x = 1 ~ 32 mol%) were investigated, and exfoliation resistance was evaluated. And in this paper, the oxide/metal interfacial microstructure of oxidized CP Ti, TNTZ alloy, and Ti-Nb alloy was studied by a transmission electron microscopy (TEM) and by a scanning transmission electron microscopy with an electron dispersive spectroscopy (STEM-EDS). The cross-sectional observations suggested that the substrate was gradually oxidized during heat treatment, and nucleation and grain growth of TiO2 and TiNb2O7 proceed at the metal/oxide interface. Consequently, the gradual oxidation process in TNTZ and Ti-Nb alloys could lead to its continuous interfacial microstructure and dense oxide structure, which can achieve high exfoliation resistance.

The early stages of high temperature oxidation of an Al-0.5wt% Mg alloy

1998 ◽  
Vol 40 (4-5) ◽  
pp. 557-575 ◽  
Author(s):  
K. Shimizu ◽  
G.M. Brown ◽  
K. Kobayashi ◽  
P. Skeldon ◽  
G.E. Thompson ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Oxidation ◽  
Mg Alloy ◽  
Temperature Oxidation ◽  
Early Stages

SiCx Layers on Diamond by Si Implantation for Protection Against High Temperature Oxidation

1994 ◽  
Vol 354 ◽  
Author(s):  
A.R. Kirkpatrick ◽  
S. Dallek ◽  
W.E. Kosik
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
High Temperature Oxidation ◽  
Test Procedures ◽  
Temperature Oxidation ◽  
Barrier Layers ◽  
Ir Spectrophotometry ◽  
Temperature Exposure ◽  
Dose Levels ◽  
Scanning Electron

AbstractDiamond is subject to oxidation if exposed to oxygen while at temperatures above approximately 600°C. A method has been demonstrated for protection of diamond against oxidation by employing Si+ ion implantation to transform a thin surface layer into silicon carbide which exhibits excellent oxidation resistance. Integral SiCx oxidation barrier layers have been formed on diamond using high Si+ dose levels and high temperatures during implantation. SiCx layers have been characterized using Rutherford backscattering, IR spectrophotometry and scanning electron microscopy. The effects of high temperature exposure to oxygen have been examined using various oxidation test procedures including thermogravimetric analysis. SiCx layers capable of providing protection of underlying diamond for periods of several minutes at temperatures beyond 1000°C have been accomplished.

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