Chemical forms of molybdenum ion in nitric acid solution studied using liquid-phase X-ray absorption fine structure, Ultraviolet–Visible absorption spectroscopy and first-principles calculations

2019 ◽  
Vol 723 ◽  
pp. 76-81 ◽  
Author(s):  
Shinta Watanabe ◽  
Toshikazu Sato ◽  
Masato Nakaya ◽  
Tomoko Yoshida ◽  
Jun Onoe
2016 ◽  
Vol 309 (3) ◽  
pp. 1087-1095 ◽  
Author(s):  
Catherine Riddle ◽  
Kenneth Czerwinski ◽  
Eunja Kim ◽  
Patricia Paviet ◽  
Philippe Weck ◽  
...  

1999 ◽  
Vol 573 ◽  
Author(s):  
A. P. Hitchcock ◽  
T. Tyliszczak ◽  
Z. H. Lu ◽  
P. Brodersen ◽  
M. W. C. Dharmawardana

ABSTRACTThe structure of monolayer-passivated single crystal semiconductor surfaces has been studied using synchrotron radiation X-ray absorption fine structure spectroscopy (XAFS). The near edge and extended fine structure signals, supported in some cases by first-principles calculations, have been used to investigate Ge(111)-Cl; GaAs(111)-Cl; GaAs(111)A-S, GaAs(111)B-S and GaAs(001)-S. The use of a solid state Ge X-ray fluorescence array detector has led to significant improvements in data quality and thus structural accuracy. The relationship between the derived surface structures and the development of improved passivated surfaces is discussed.


1999 ◽  
Vol 06 (06) ◽  
pp. 1109-1120 ◽  
Author(s):  
A. P. HITCHCOCK ◽  
T. TYLISZCZAK ◽  
P. BRODERSEN ◽  
Z. H. LU ◽  
M. W. C. DHARMA-WARDANA

Monolayers of S and Cl have useful passivation properties for group IV and III–V semiconductor surfaces. The structures of Ge(111)–Cl; GaAs(111)–Cl; GaAs(111)A–S, GaAs(111)B–S and GaAs(001)–S monolayer-passivated single crystal semiconductor surfaces have been studied using synchrotron radiation X-ray absorption fine structure spectroscopy (XAFS). The near edge and extended fine structure signals are interpreted using comparisons to multiple scattering XAFS calculations and, in the cases of Ge(111)–Cl and GaAs(111)–Cl, comparison to first-principles calculations. Relationships between the surface structure and the development of improved passivated surfaces are discussed.


2003 ◽  
Vol 68 (5) ◽  
Author(s):  
C.-H. Chang ◽  
Su-Huai Wei ◽  
J. W. Johnson ◽  
S. B. Zhang ◽  
N. Leyarovska ◽  
...  

2012 ◽  
Vol 112 (11) ◽  
pp. 113519 ◽  
Author(s):  
Shaojie Fang ◽  
Zhiyong Pang ◽  
Yonghua Du ◽  
Lirong Zheng ◽  
Xijian Zhang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document