Identification of the different contributions of pseudocapacitance, quantum capacitance, their electronic-structure-based intrinsic transport kinetics in electrode materials

2021 ◽  
pp. 138666
Author(s):  
Jing Wen ◽  
Wenhui Zhang ◽  
Lirong Zhang ◽  
Xitian Zhang ◽  
Yang-Xin Yu
2020 ◽  
Vol 10 (18) ◽  
pp. 6266-6273
Author(s):  
Yalan Zhang ◽  
Zebin Yu ◽  
Ronghua Jiang ◽  
Jung Huang ◽  
Yanping Hou ◽  
...  

Excellent electrochemical water splitting with remarkable durability can provide a solution to satisfy the increasing global energy demand in which the electrode materials play an important role.


2017 ◽  
Vol 19 (20) ◽  
pp. 13195-13209 ◽  
Author(s):  
Johann Lüder ◽  
Mun Ho Cheow ◽  
Sergei Manzhos

In this paper, we present a systematic study of the effects of p- and n-doping in small molecules on the voltage and capacity of organic electrode materials for electrochemical batteries.


2017 ◽  
Vol 7 (3) ◽  
pp. 523-540 ◽  
Author(s):  
Johann Lüder ◽  
Fleur Legrain ◽  
Yingqian Chen ◽  
Sergei Manzhos

Abstract


Author(s):  
Shuo Xu ◽  
Shi-Jie Wang ◽  
Li Xiao-Hong ◽  
Hong-Ling Cui

Defect and doping are effective methods to modulate the physical and chemical properties of materials. In this report, we investigated the structural stability, electronic properties and quantum capacitance (Cdiff) of Zr2CO2 by changing the dopants of Si, Ge, Sn, N, B, S and F in the substitutional site. The doping of F, N, and S atoms makes the system undergo the semiconductor-to-conductor transition, while the doping of Si, Ge, and Sn maintains the semiconductor characteristics. The Cdiff of the doped systems are further explored. The B-doped system can be used as cathode materials, while the systems doped by S, F, N, Sn atoms are promising anode materials of asymmetric supercapacitors, especially for the S-doped system. The improved Cdiff mainly originates from Fermi-level shifts and Fermi-Dirac distribution by the introduction of the dopant. The effect of temperature on Cdiff is further explored. The result indicates that the maximum Cdiff of the studied systems gradually decreases with the increasing temperature. Our investigation can provide useful theoretical basis for designing and developing the ideal electrode materials for supercapacitors.


MRS Advances ◽  
2017 ◽  
Vol 2 (8) ◽  
pp. 459-464
Author(s):  
Charles C. Hays ◽  
Uichiro Mizutani

ABSTRACTMicrostructural, chemical, and electrochemical property measurements results, for (111) crystallographically oriented Pt100-xMx (M = V, Zr; 3 < xv < 14; and 4 < xZr < 35, At.%) sputtered thin films are presented, with electronic structure calculations. These Pt-based alloys were prepared to investigate early transition metal (ETM), late-transition-metal (LTM) alloys as potential electrode materials in hydrogen-air polymer-electrolyte-membrane fuel cells (PEMFCs). The Pt100-xMx oxygen-reduction-reaction (ORR) currents peak for 8 < x < 10 atomic percent, so local chemical-short-range-order, may exist; as the peak in ORR activity is commensurate with the strong ordering in Pt8M (M = Ti, V, Zr). The hydrogen under potential deposition (Hupd) at Pt active area, and ORR reaction kinetics, on the alloyed surfaces are composition dependent, suggesting three possible effects: 1) charge transfer from V-(3d)3 [or Zr- (4d)2] states, to the hole in the top of the Pt-(5d)9 band alters the electronic structure at the Fermi energy; 2) alloying Pt with the ETM elements introduces a bi-functional character to the electrode surface, and 3) or the presence of short range chemical order induces a Fermi energy shift. To confirm the 1st and 3rd hypotheses, the electronic structure of Pt8Ti, Pt8V, and Pt8Zr, were calculated using the WIEN2k program package. The electronic structure calculations for ordered Pt8M give strong confirmation of the hypotheses, as they reveal that the Pt8M Fermi energy lies within the Pt-5d anti-bonding band, and also falls into a pseudogap in between the Md bonding and anti-bonding bands. In addition, the Pt8M DOS calculations confirm the presence of a deep pseudogap formed across the Fermi energy for both the Pt-sp and M-sp electrons. These experimental and theoretical results motivate additional studies of the novel Pt8M phases.


2019 ◽  
Vol 21 (8) ◽  
pp. 4276-4285 ◽  
Author(s):  
Q. Xu ◽  
G. M. Yang ◽  
Xiaofeng Fan ◽  
W. T. Zheng

Metal-doping with the formation of a metal–vacancy complex results in an obvious increase of silicene's quantum capacitance.


Author(s):  
Tufan Roy ◽  
Masahito Tsujikawa ◽  
Masafumi Shirai

Abstract We study IrCrMnZ (Z=Al, Ga, Si, Ge) systems using first-principles calculations from the perspective of their application as the electrode materials of MgO-based MTJs. These materials have highly spin-polarized conduction electrons with partially occupied Δ1 band, which is important for coherent tunneling in parallel magnetization configuration. The Curie temperatures of IrCrMnAl and IrCrMnGa are very high (above 1300 K) as predicted from mean-field-approximation. The stability of ordered phase against various antisite disorders has been investigated. We discuss here the effect of ``spin-orbit-coupling'' on the electronic structure around Fermi level. Further, we investigate the electronic structure of IrCrMnZ/MgO heterojunction along (001) direction. IrCrMnAl/MgO and IrCrMnGa/MgO maintain half-metallicity even at the MgO interface, with no interfacial states at/around Fermi level in the minority-spin channel. Large majority-spin conductance of IrCrMnAl/MgO/IrCrMnAl and IrCrMnGa/MgO/IrCrMnGa is reported from the calculation of ballistic spin-transport property for parallel magnetization configuration. We propose IrCrMnAl/MgO/IrCrMnAl and IrCrMnGa/MgO/IrCrMnGa as promising MTJs with a weaker temperature dependence of tunneling magnetoresistance ratio, owing to their very high Curie temperatures.


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