Deposition of thick boron-doped homoepitaxial single crystal diamond by microwave plasma chemical vapor deposition

2009 ◽  
Vol 18 (5-8) ◽  
pp. 704-706 ◽  
Author(s):  
R. Ramamurti ◽  
M. Becker ◽  
T. Schuelke ◽  
T.A. Grotjohn ◽  
D.K. Reinhard ◽  
...  
CrystEngComm ◽  
2022 ◽  
Author(s):  
Wei Cao ◽  
Zhibin Ma ◽  
Hongyang Zhao ◽  
Deng Gao ◽  
Qiuming Fu

On a semi-open holder, the homoepitaxial lateral growth of single-crystal diamond (SCD) was carried out via microwave plasma chemical vapor deposition (MPCVD). By tuning and optimizing two different structures of...


2006 ◽  
Vol 15 (2-3) ◽  
pp. 304-308 ◽  
Author(s):  
Pawan K. Tyagi ◽  
Abha Misra ◽  
K.N. Narayanan Unni ◽  
Padmnabh Rai ◽  
Manoj K. Singh ◽  
...  

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