High breakdown voltage of boron-doped diamond metal semiconductor field effect transistor grown on freestanding heteroepitaxial diamond substrate

2021 ◽  
pp. 108782
Author(s):  
Uiho Choi ◽  
Taemyung Kwak ◽  
Sanghoon Han ◽  
Seong-Woo Kim ◽  
Okhyun Nam
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Boron Doped Diamond ◽  
High Breakdown Voltage ◽  
Boron Doped ◽  
Diamond Substrate ◽  
Effect Transistor

scholarly journals Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing

Sensors ◽  
2018 ◽  
Vol 18 (7) ◽  
pp. 2178 ◽  
Author(s):  
Shaili Falina ◽  
Sora Kawai ◽  
Nobutaka Oi ◽  
Hayate Yamano ◽  
Taisuke Kageura ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensing ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Effect Transistor

On the --- high breakdown voltage field-effect transistor

1999 ◽  
Vol 14 (4) ◽  
pp. 307-311 ◽  
Author(s):  
Wen-Lung Chang ◽  
Shiou-Ying Cheng ◽  
Yung-Hsin Shie ◽  
Hsi-Jen Pan ◽  
Wen-Shiung Lour ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Breakdown Voltage ◽  
Effect Transistor

Polycrystalline boron-doped diamond with an oxygen-terminated surface channel as an electrolyte-solution-gate field-effect transistor for pH sensing

2016 ◽  
Vol 212 ◽  
pp. 10-15 ◽  
Author(s):  
Yukihiro Shintani ◽  
Shoji Ibori ◽  
Keisuke Igarashi ◽  
Takuro Naramura ◽  
Masafumi Inaba ◽  
...  
Keyword(s):  
Electrolyte Solution ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensing ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Effect Transistor
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