Enhancement‐Mode
            β
            ‐Ga
            2
            O
            3
            Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

Yuanjie Lv; Xingye Zhou; Shibing Long; Yuangang Wang; Xubo Song; Xuanze Zhou; Guangwei Xu; Shixiong Liang; Zhihong Feng; Shujun Cai; Xingchang Fu; Aimin Pu; Ming Liu

doi:10.1002/pssr.201900586

Enhancement‐Mode β ‐Ga 2 O 3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201900586 ◽

2019 ◽

Vol 14 (3) ◽

pp. 1900586 ◽

Cited By ~ 2

Author(s):

Yuanjie Lv ◽

Xingye Zhou ◽

Shibing Long ◽

Yuangang Wang ◽

Xubo Song ◽

...

Keyword(s):

Metal Oxide ◽

Breakdown Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxygen Annealing ◽

Enhancement Mode ◽

High Breakdown Voltage ◽

Effect Transistor

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P-Channel Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistor with Split N-Type Buried Layer for High Breakdown Voltage and Low Specific On-Resistance

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.4046 ◽

2007 ◽

Vol 46 (7A) ◽

pp. 4046-4049

Author(s):

Chorng-Wei Liaw ◽

Ching-Hung Chang ◽

Ming-Jang Lin ◽

Ya-Ching King ◽

Charles Ching-Hsiang Hsu ◽

...

Keyword(s):

Metal Oxide ◽

Breakdown Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Breakdown Voltage ◽

Effect Transistor ◽

Buried Layer

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Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3025909 ◽

2009 ◽

Vol 27 (1) ◽

pp. 214 ◽

Cited By ~ 11

Author(s):

Fei Gao ◽

S. J. Lee ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Surface Passivation ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Effect Transistor

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Breakdown voltage and on-resistance considerations in the floating islands metal-oxide semiconductor field-effect transistor

International Journal of Electronics ◽

10.1080/00207210903017206 ◽

2010 ◽

Vol 97 (3) ◽

pp. 241-247 ◽

Cited By ~ 3

Author(s):

A. Galadi ◽

F. Morancho ◽

M. M. Hassani

Keyword(s):

Metal Oxide ◽

Breakdown Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2931708 ◽

2008 ◽

Vol 92 (20) ◽

pp. 203505 ◽

Cited By ~ 27

Author(s):

D. Shahrjerdi ◽

T. Akyol ◽

M. Ramon ◽

D. I. Garcia-Gutierrez ◽

E. Tutuc ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Effect Transistor ◽

Al2o3 Gate Dielectric

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High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition

10.1117/12.179699 ◽

1994 ◽

Cited By ~ 1

Author(s):

Biing-Der Liu ◽

Si-Chen Lee ◽

Kou-Chen Liu ◽

Tai Ping Sun ◽

Sheng-Jehn Yang

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Breakdown Voltage ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Fabrication of gate stack with high gate work function for implantless enhancement-mode GaAs n-channel metal-oxide-semiconductor field effect transistor applications

Applied Physics Letters ◽

10.1063/1.2905259 ◽

2008 ◽

Vol 92 (12) ◽

pp. 123513 ◽

Cited By ~ 2

Author(s):

Ming Zhu ◽

Hock-Chun Chin ◽

Ganesh S. Samudra ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Enhancement Mode ◽

Effect Transistor ◽

Gate Work Function

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Ga2O3(Gd2O3)∕Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion

Applied Physics Letters ◽

10.1063/1.2817742 ◽

2007 ◽

Vol 91 (22) ◽

pp. 223502 ◽

Cited By ~ 25

Author(s):

J. F. Zheng ◽

W. Tsai ◽

T. D. Lin ◽

Y. J. Lee ◽

C. P. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Effect Transistor

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Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Zero Field ◽

Charge Pumping ◽

Effect Transistor

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Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

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