Threshold-voltage shift model based on electron tunneling under positive gate bias stress for amorphous InGaZnO thin-film transistors

Displays ◽  
2018 ◽  
Vol 53 ◽  
pp. 14-17 ◽  
Author(s):  
Piao-Rong Xu ◽  
Ruo-He Yao
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Tunneling ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Bias Stress ◽  
Shift Model ◽  
Amorphous Ingazno

Local-Degradation-Induced Threshold Voltage Shift in Turned-OFF Amorphous InGaZnO Thin Film Transistors Under AC Drain Bias Stress

2015 ◽  
Vol 36 (6) ◽  
pp. 579-581 ◽  
Author(s):  
Jong In Kim ◽  
In-Tak Cho ◽  
Chan-Yong Jeong ◽  
Daeun Lee ◽  
Hyuck-In Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Bias Stress ◽  
Drain Bias ◽  
Amorphous Ingazno

DC and AC Gate-Bias Stability of Nanocrystalline Silicon Thin-Film Transistors Made on Colorless Polyimide Foil Substrates

2011 ◽  
Vol 1321 ◽  
Author(s):  
I-Chung Chiu ◽  
I-Chun Cheng ◽  
Jian Z. Chen ◽  
Jung-Jie Huang ◽  
Yung-Pei Chen
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Nanocrystalline Silicon ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Bias Stress ◽  
Mechanical Tensile ◽  
Gate Bias Stress

ABSTRACTStaggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) were demonstrated on flexible colorless polyimide substrates. The dc and ac bias-stress stability of these TFTs were investigated with and without mechanical tensile stress applied in parallel to the current flow direction. The findings indicate that the threshold voltage shift caused by an ac gate-bias stress was smaller compared to that caused by a dc gate-bias stress. Frequency dependence of threshold voltage shift was pronounced in the negative gate-bias stress experiments. Compared to TFTs under pure electrical gate-bias stressing, the stability of the nc-Si:H TFTs degrades further when the mechanical tensile strain is applied together with an electrical gate-bias stress.

scholarly journals Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 603 ◽  
Author(s):  
Yan Zhou ◽  
Chengyuan Dong
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Thin Film Transistors ◽  
Characteristic Length ◽  
Ambient Atmosphere ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Bias Stress ◽  
Amorphous Ingazno ◽  
Gate Bias Stress

Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO2 or Al2O3 films with different thicknesses were used to passivate the a-IGZO TFTs, making the devices more stable during PGBS tests. With the increase in PV layer thickness, the PGBS stability of a-IGZO TFTs improved due to the stronger barrier effect of the PV layers. When the PV layer thickness was larger than the characteristic length, nearly no threshold voltage shift occurred, indicating that the ambient atmosphere effect rather than the charge trapping dominated the PGBS instability of a-IGZO TFTs in this study. The SiO2 PV layers showed a better improvement effect than the Al2O3 because the former had a smaller characteristic length (~5 nm) than that of the Al2O3 PV layers (~10 nm).

scholarly journals Abnormal Threshold Voltage Shift of Amorphous InGaZnO Thin-Film Transistors Due to Mobile Sodium

2016 ◽  
Vol 4 (5) ◽  
pp. 353-357 ◽  
Author(s):  
Chieh Lo ◽  
Zheng-Lun Feng ◽  
Wei-Lun Huang ◽  
Chee Wee Liu ◽  
Tsang-Long Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Amorphous Ingazno
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