Investigation on the properties of Li doped Ni-W oxide film and application for black electrochromic device

2022 ◽  
pp. 139833
Author(s):  
Youxiu Wei ◽  
Weiming Liu ◽  
Jiuyong Li ◽  
Ziyi Fu ◽  
Yue Yan
Keyword(s):  
Oxide Film ◽  
Electrochromic Device

Versatile displays based on a 3-dimensionally ordered macroporous vanadium oxide film for advanced electrochromic devices

2015 ◽  
Vol 3 (13) ◽  
pp. 3159-3166 ◽  
Author(s):  
Zhongqiu Tong ◽  
Haowei Yang ◽  
Li Na ◽  
Huiying Qu ◽  
Xiang Zhang ◽  
...  
Keyword(s):  
Oxide Film ◽  
Vanadium Oxide ◽  
Cycling Stability ◽  
Electrochromic Device ◽  
Electrochromic Devices ◽  
Switching Speed ◽  
Fast Switching ◽  
Ordered Macroporous ◽  
Good Cycling Stability ◽  
Fast Switching Speed

An electrochromic device based on a 3DOM vanadium oxide film and a PEDOT:PSS film was fabricated, and this device shows multicolor changes with fast switching speed and good cycling stability.

Deposited emulsion particles in the pores of aluminum oxide film

1978 ◽  
Vol 36 (1) ◽  
pp. 450-451
Author(s):  
Michio Ashida ◽  
Yasukiyo Ueda
Keyword(s):  
Oxide Film ◽  
Acid Solution ◽  
Barrier Layer ◽  
Colloidal Particles ◽  
Oxalic Acid Solution ◽  
Anodic Oxide ◽  
Anodic Oxide Film ◽  
Carbon Replica ◽  
Sectioning Method ◽  
Thin Sectioning

An anodic oxide film is formed on aluminum in an acidic elecrolyte during anodizing. The structure of the oxide film was observed directly by carbon replica method(l) and ultra-thin sectioning method(2). The oxide film consists of barrier layer and porous layer constructed with fine hexagonal cellular structure. The diameter of micro pores and the thickness of barrier layer depend on the applying voltage and electrolyte. Because the dimension of the pore corresponds to that of colloidal particles, many metals deposit in the pores. When the oxide film is treated as anode in emulsion of polyelectrolyte, the emulsion particles migrate onto the film and deposit on it. We investigated the behavior of the emulsion particles during electrodeposition.Aluminum foils (99.3%) were anodized in either 0.25M oxalic acid solution at 30°C or 3M sulfuric acid solution at 20°C. After washing with distilled water, the oxide films used as anode were coated with emulsion particles by applying voltage of 200V and then they were cured at 190°C for 30 minutes.

Preparation, Electronic Structure and Optical Properties of the Electrochromic Thin Films

2004 ◽  
Vol 9 (4) ◽  
pp. 363-372 ◽  
Author(s):  
T. Lukaszewicz ◽  
A. Ravinski ◽  
I. Makoed
Keyword(s):  
Electrochromic Device ◽  
Orbital Method ◽  
Optical Parameters ◽  
Full Potential ◽  
Electrochromic Devices ◽  
Energy Bands ◽  
Conducting Film ◽  
Recombination Probability ◽  
Transparent Conducting ◽  
Smoluchowski Equations

A new multilayer electrochromic device has been constructed according to the following pattern: glass1/ITO/WO3/gel electrolyte/BP/ITO/glass2, where ITO is a transparent conducting film made of indium and tin oxide and with the surface resistance equal 8–10 Ω/cm2 . The electrochromic devices obtained in the research are characterized by great (considerable) transmittance variation between coloration and bleaching state (25–40% at applied voltage of 1.5 to 3 V), and also high coloration efficiency (above 100 cm2 /C). Selfconsistent energy bands, dielectric permittivity and optical parameters are calculated using a full-potential linear muffin-tin orbital method. The numerical solution of the Debye-Smoluchowski equations is developed for simulating recombination probability of Li+ ions in amorphous electrolyte.

Surface Microstructure Evolution Upon Silicidation of Ni(Pt) and the Different Responses to Metal Etch

2013 ◽  
Author(s):  
Wentao Qin ◽  
Dorai Iyer ◽  
Jim Morgan ◽  
Carroll Casteel ◽  
Robert Watkins ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxide Film ◽  
Microstructure Evolution ◽  
Depth Profiling ◽  
Surface Microstructure ◽  
The Difference ◽  
Surface Microstructures ◽  
Pt Films

Abstract Ni(5 at.%Pt ) films were silicided at a temperature below 400 °C and at 550 °C. The two silicidation temperatures had produced different responses to the subsequent metal etch. Catastrophic removal of the silicide was seen with the low silicidation temperature, while the desired etch selectivity was achieved with the high silicidation temperature. The surface microstructures developed were characterized with TEM and Auger depth profiling. The data correlate with both silicidation temperatures and ultimately the difference in the response to the metal etch. With the high silicidation temperature, there existed a thin Si-oxide film that was close to the surface and embedded with particles which contain metals. This thin film is expected to contribute significantly to the desired etch selectivity. The formation of this layer is interpreted thermodynamically.

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