Electrophysical Characteristics of Tantalum Oxide Structures

In this work has been developed a technology for obtaining nickel-insulator-aluminum structure with 7 nm thick tantalum oxide deposited by atomic-layer deposition. An asymmetric current-voltage characteristic of the structure is obtained, and the heights of potential barriers at the metal-insulator interface are determined. The permittivity of the tantalum oxide film has been determined experimentally in this work.

Electrochemical Property of Terbium Doped Tantalum Oxide Film Electrode

Terbium doped tantalum oxide (Tb-Ta2O5) particles were synthesized with a low hydrothermal method. The phase structure of Tb-Ta2O5 obtained was performed by X-ray diffraction (XRD). The result revealed that the terbium doped Ta2O5 belongs to orthorhombic crystal. The electrochemical property of methylene blue (MB) at Tb-Ta2O5 film electrode in 0.5 mol dm-3 KCl aqueous solution was investigated with cyclic voltgrammetry (CV). The CV result indicated that the electrochemical kinetics of MB was diffusion controlling at Tb-Ta2O5 film electrode. Tb dopping imporved the electrochemical property of Ta2O5 film electrode. Tb-Ta2O5 is used as a kind of electrode material which has some new potential applications.