Observation of bulk electronic states of Kondo semiconductor YbB12 by high-resolution soft X-ray photoemission spectroscopy

2007 ◽  
Vol 156-158 ◽  
pp. 472-475 ◽  
Author(s):  
A. Shigemoto ◽  
J. Yamaguchi ◽  
A. Sekiyama ◽  
S. Imada ◽  
A. Yamasaki ◽  
...  
Keyword(s):  
High Resolution ◽  
Electronic States ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Kondo Semiconductor

High-resolution soft X-ray photoemission spectroscopy of spinel-type compound CuIr2S4

2004 ◽  
Vol 272-276 ◽  
pp. E297-E298 ◽  
Author(s):  
T Okane ◽  
S.-i Fujimori ◽  
K Mamiya ◽  
J Okamoto ◽  
Y Muramatsu ◽  
...  
Keyword(s):  
High Resolution ◽  
Photoemission Spectroscopy ◽  
Spinel Type ◽  
X Ray ◽  
Type Compound

The study of oxygen molecules on Pt (111) surface with high resolution x-ray photoemission spectroscopy

2010 ◽  
Vol 133 (3) ◽  
pp. 034501 ◽  
Author(s):  
Yong Su Kim ◽  
Aaron Bostwick ◽  
Eli Rotenberg ◽  
Philip N. Ross ◽  
Soon Cheol Hong ◽  
...  
Keyword(s):  
High Resolution ◽  
Photoemission Spectroscopy ◽  
X Ray

High Resolution Hard X-ray Photoemission Spectroscopy at SPring-8: Basic Performance and Characterization

2007 ◽  
Author(s):  
Yasutaka Takata ◽  
Koji Horiba ◽  
Masaharu Matsunami ◽  
Shik Shin ◽  
Makina Yabashi ◽  
...  
Keyword(s):  
High Resolution ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Basic Performance

scholarly journals Development of a soft X-ray angle-resolved photoemission system applicable to 100 µm crystals

2011 ◽  
Vol 18 (6) ◽  
pp. 879-884 ◽  
Author(s):  
Takayuki Muro ◽  
Yukako Kato ◽  
Tomohiro Matsushita ◽  
Toyohiko Kinoshita ◽  
Yoshio Watanabe ◽  
...  
Keyword(s):  
Electronic States ◽  
Spot Size ◽  
Optical Microscope ◽  
Photoemission Spectroscopy ◽  
Beam Spot ◽  
X Ray ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Clear Band ◽  
Sample Position

A system for angle-resolved photoemission spectroscopy (ARPES) of small single crystals with sizes down to 100 µm has been developed. Soft X-ray synchrotron radiation with a spot size of ∼40 µm × 65 µm at the sample position is used for the excitation. Using this system an ARPES measurement has been performed on a Si crystal of size 120 µm × 100 µm × 80 µm. The crystal was properly oriented on a sample stage by measuring the Laue spots. The crystal was cleavedin situwith a microcleaver at 100 K. The cleaved surface was adjusted to the beam spot using an optical microscope. Consequently, clear band dispersions along the Γ–Xdirection reflecting the bulk electronic states were observed with a photon energy of 879 eV.

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