Anneal temperature dependence of resistive switching and photoelectric properties of Bismuth ferrite thin film prepared via sol-gel method

FlatChem ◽  
2021 ◽  
pp. 100266
Author(s):  
Jun Li ◽  
Zhen-Xun Tang ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Yan-Ping Jiang
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Resistive Switching ◽  
Bismuth Ferrite ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Photoelectric Properties ◽  
Anneal Temperature

NiO-doped CaCu3Ti4O12 Thin Film by Sol-Gel Method

2013 ◽  
Author(s):  
Dong XU ◽  
Qi SONG ◽  
Ke ZHANG ◽  
Hong-Xing XU ◽  
Yong-Tao YANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

Stability characteristics of gallium-doped zinc-tin-oxide thin-film transistors fabricated using a sol-gel method

2013 ◽  
Vol 62 (8) ◽  
pp. 1176-1182 ◽  
Author(s):  
Jong Hoon Lee ◽  
Chang Hoi Kim ◽  
Hong Seung Kim ◽  
Jae Hoon Park ◽  
Jin Hwa Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Zinc Tin Oxide

scholarly journals Preparation of Hydrophobic Optical Silica Thin Film with Sol-gel Method

2001 ◽  
Vol 17 (12) ◽  
pp. 1112-1116
Author(s):  
Ma Jian-Hua ◽  
◽  
Wu Guang-Ming ◽  
Cheng Yin-Bing ◽  
Sun Qi ◽  
...  
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Silica Thin Film

Pyroelectric Properties of the Plt(10) Thin Film on the P-Doped Poly Silicon

1996 ◽  
Vol 433 ◽  
Author(s):  
Seong Jun Kang ◽  
Yung Sup Yoon ◽  
Dong Il Kim
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Curie Temperature ◽  
Room Temperature ◽  
Sol Gel ◽  
Pyroelectric Coefficient ◽  
Pyroelectric Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Poly Silicon

AbstractWe have studied the pyroelectric properties of the PLT(10) thin film deposited on a p-doped poly-Si electrode by using the sol-gel method. Measurement of the dielectric constant as a function of temperature shows the typical characteristics of a ferroelectric. The dielectric constant reaches a maximum at 295°C, which can be thought of as the Curie temperature. The PLT(10) thin film on p-doped poly-Si fabricated in this research shows excellent pyroelectric properties. The pyroelectric coefficient and the fiqures of merit, Fv and FD at room temperature are measured as 5.76 × 10−8 C/cm2 °C, 1.17 × 10−10C-cm/J and 0.93 × 10−8C-cm/J, respectively.

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